Quadruple reduction of threshold current density for microring quantum dot lasers epitaxially grown on (001) Si

Yating Wan; Daehwan Jung; Justin Norman; Kaiyin Feng; Alp Dagli; Arthur C. Gossard; John E. Bowers

Quadruple reduction of threshold current density for microring quantum dot lasers epitaxially grown on (001) Si

Yating Wan, Daehwan Jung, Justin Norman, Kaiyin Feng, Alp Dagli, Arthur C. Gossard, John E. Bowers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A quadruple reduction of threshold current density was achieved for electrically pumped quantum-dot micro-rings epitaxially grown on (001) silicon. This was enabled by a low threading dislocation density GaAs buffer layer and a smoothed etching sidewall.

Original language	English (US)
Title of host publication	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781943580422
State	Published - Aug 6 2018
Externally published	Yes

Cite this

@inproceedings{ffe38a701b1a4afe9e915d7d4e32e139,

title = "Quadruple reduction of threshold current density for microring quantum dot lasers epitaxially grown on (001) Si",

abstract = "A quadruple reduction of threshold current density was achieved for electrically pumped quantum-dot micro-rings epitaxially grown on (001) silicon. This was enabled by a low threading dislocation density GaAs buffer layer and a smoothed etching sidewall.",

author = "Yating Wan and Daehwan Jung and Justin Norman and Kaiyin Feng and Alp Dagli and Gossard, {Arthur C.} and Bowers, {John E.}",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-18",

year = "2018",

month = aug,

day = "6",

language = "English (US)",

isbn = "9781943580422",

booktitle = "2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Quadruple reduction of threshold current density for microring quantum dot lasers epitaxially grown on (001) Si. / Wan, Yating; Jung, Daehwan; Norman, Justin et al.
2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Quadruple reduction of threshold current density for microring quantum dot lasers epitaxially grown on (001) Si

AU - Wan, Yating

AU - Jung, Daehwan

AU - Norman, Justin

AU - Feng, Kaiyin

AU - Dagli, Alp

AU - Gossard, Arthur C.

AU - Bowers, John E.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2018/8/6

Y1 - 2018/8/6

N2 - A quadruple reduction of threshold current density was achieved for electrically pumped quantum-dot micro-rings epitaxially grown on (001) silicon. This was enabled by a low threading dislocation density GaAs buffer layer and a smoothed etching sidewall.

AB - A quadruple reduction of threshold current density was achieved for electrically pumped quantum-dot micro-rings epitaxially grown on (001) silicon. This was enabled by a low threading dislocation density GaAs buffer layer and a smoothed etching sidewall.

UR - http://www.scopus.com/inward/record.url?scp=85052595001&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781943580422

BT - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Quadruple reduction of threshold current density for microring quantum dot lasers epitaxially grown on (001) Si

Abstract

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