TY - JOUR
T1 - Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In
2
O
3
Transistors
AU - Isakov, Ivan
AU - Faber, Hendrik
AU - Mottram, Alexander D.
AU - Das, Satyajit
AU - Grell, Max
AU - Regoutz, Anna
AU - Kilmurray, Rebecca
AU - McLachlan, Martyn A.
AU - Payne, David J.
AU - Anthopoulos, Thomas D.
N1 - KAUST Repository Item: Exported on 2020-10-07
Acknowledged KAUST grant number(s): OSR-2018-CARF/CCF-3079
Acknowledgements: The authors would like to thank Katerina Chernova for fruitful discussions on ellipsometry. This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079.
PY - 2020/10/5
Y1 - 2020/10/5
N2 - The dependence of charge carrier mobility on semiconductor channel thickness in field-effect transistors is a universal phenomenon that has been studied extensively for various families of materials. Surprisingly, analogous studies involving metal oxide semiconductors are relatively scarce. Here, spray-deposited In2O3 layers are employed as the model semiconductor system to study the impact of layer thickness on quantum confinement and electron transport along the transistor channel. The results reveal an exponential increase of the in-plane electron mobility (µe) with increasing In2O3 thickness up to ≈10 nm, beyond which it plateaus at a maximum value of ≈35 cm2 V−1 s−1. Optical spectroscopy measurements performed on In2O3 layers reveal the emergence of quantum confinement for thickness
AB - The dependence of charge carrier mobility on semiconductor channel thickness in field-effect transistors is a universal phenomenon that has been studied extensively for various families of materials. Surprisingly, analogous studies involving metal oxide semiconductors are relatively scarce. Here, spray-deposited In2O3 layers are employed as the model semiconductor system to study the impact of layer thickness on quantum confinement and electron transport along the transistor channel. The results reveal an exponential increase of the in-plane electron mobility (µe) with increasing In2O3 thickness up to ≈10 nm, beyond which it plateaus at a maximum value of ≈35 cm2 V−1 s−1. Optical spectroscopy measurements performed on In2O3 layers reveal the emergence of quantum confinement for thickness
UR - http://hdl.handle.net/10754/665454
UR - https://onlinelibrary.wiley.com/doi/10.1002/aelm.202000682
U2 - 10.1002/aelm.202000682
DO - 10.1002/aelm.202000682
M3 - Article
SN - 2199-160X
SP - 2000682
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
ER -