Quantum dash intermixing

Hery Susanto Djie; Yang Wang; Yun Hsiang Ding; Dong Ning Wang; James C.M. Hwang; Xiao Ming Fang; Ying Wu; Joel M. Fastenau; Amy W.K. Liu; Gerard T. Dang; Wayne H. Chang; Boon S. Ooi

doi:10.1109/JSTQE.2008.921396

Quantum dash intermixing

Hery Susanto Djie^*, Yang Wang, Yun Hsiang Ding, Dong Ning Wang, James C.M. Hwang, Xiao Ming Fang, Ying Wu, Joel M. Fastenau, Amy W.K. Liu, Gerard T. Dang, Wayne H. Chang, Boon S. Ooi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We investigate the intermixing effect in InAs/InAlGaAs quantum-dash-in-well structures grown on InP substrate. Both impurity-free vacancy disordering (IFVD) via dielectric cap annealing, and impurity-induced disordering (IID) using nitrogen ion-implantation techniques have been employed to spatially control the group-III intermixing in the quantum-dash (Qdash) system. Differential bandgap shifts of up to 80 nm and 112 nm have been observed from the IFVD and IID processes, respectively. Compared to the control (nonintermixed) lasers, the light-current characteristics for the 125 nm wavelength shifted Qdash lasers are not significantly changed, suggesting that the quality of the intermixed material is well preserved. The intermixed lasers exhibit a narrower linewidth as compared to the as-grown laser due to the improved dash homogeneity. The integrity of the material is retained after intermixing, suggesting the potential application for the planar integration of multiple active/passive Qdash-based devices on a single InP chip.

Original language	English (US)
Pages (from-to)	1239-1249
Number of pages	11
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	14
Issue number	4
DOIs	https://doi.org/10.1109/JSTQE.2008.921396
State	Published - Jul 2008
Externally published	Yes

Keywords

Disordering
Interdiffusion
Ion-implantation
Photonic integrated circuits (PICs)
Quantum-dash (Qdash)
Quantum-dot intermixing
Quantum-well (QW) intermixing

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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@article{d39114a49e134e63a7ff4a531bf18d36,

title = "Quantum dash intermixing",

abstract = "We investigate the intermixing effect in InAs/InAlGaAs quantum-dash-in-well structures grown on InP substrate. Both impurity-free vacancy disordering (IFVD) via dielectric cap annealing, and impurity-induced disordering (IID) using nitrogen ion-implantation techniques have been employed to spatially control the group-III intermixing in the quantum-dash (Qdash) system. Differential bandgap shifts of up to 80 nm and 112 nm have been observed from the IFVD and IID processes, respectively. Compared to the control (nonintermixed) lasers, the light-current characteristics for the 125 nm wavelength shifted Qdash lasers are not significantly changed, suggesting that the quality of the intermixed material is well preserved. The intermixed lasers exhibit a narrower linewidth as compared to the as-grown laser due to the improved dash homogeneity. The integrity of the material is retained after intermixing, suggesting the potential application for the planar integration of multiple active/passive Qdash-based devices on a single InP chip.",

keywords = "Disordering, Interdiffusion, Ion-implantation, Photonic integrated circuits (PICs), Quantum-dash (Qdash), Quantum-dot intermixing, Quantum-well (QW) intermixing",

author = "{Susanto Djie}, Hery and Yang Wang and Ding, {Yun Hsiang} and Wang, {Dong Ning} and Hwang, {James C.M.} and Fang, {Xiao Ming} and Ying Wu and Fastenau, {Joel M.} and Liu, {Amy W.K.} and Dang, {Gerard T.} and Chang, {Wayne H.} and Ooi, {Boon S.}",

year = "2008",

month = jul,

doi = "10.1109/JSTQE.2008.921396",

language = "English (US)",

volume = "14",

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journal = "IEEE Journal on Selected Topics in Quantum Electronics",

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AU - Wang, Yang

AU - Ding, Yun Hsiang

AU - Wang, Dong Ning

AU - Hwang, James C.M.

AU - Fang, Xiao Ming

AU - Wu, Ying

AU - Fastenau, Joel M.

AU - Liu, Amy W.K.

AU - Dang, Gerard T.

AU - Chang, Wayne H.

AU - Ooi, Boon S.

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Y1 - 2008/7

N2 - We investigate the intermixing effect in InAs/InAlGaAs quantum-dash-in-well structures grown on InP substrate. Both impurity-free vacancy disordering (IFVD) via dielectric cap annealing, and impurity-induced disordering (IID) using nitrogen ion-implantation techniques have been employed to spatially control the group-III intermixing in the quantum-dash (Qdash) system. Differential bandgap shifts of up to 80 nm and 112 nm have been observed from the IFVD and IID processes, respectively. Compared to the control (nonintermixed) lasers, the light-current characteristics for the 125 nm wavelength shifted Qdash lasers are not significantly changed, suggesting that the quality of the intermixed material is well preserved. The intermixed lasers exhibit a narrower linewidth as compared to the as-grown laser due to the improved dash homogeneity. The integrity of the material is retained after intermixing, suggesting the potential application for the planar integration of multiple active/passive Qdash-based devices on a single InP chip.

AB - We investigate the intermixing effect in InAs/InAlGaAs quantum-dash-in-well structures grown on InP substrate. Both impurity-free vacancy disordering (IFVD) via dielectric cap annealing, and impurity-induced disordering (IID) using nitrogen ion-implantation techniques have been employed to spatially control the group-III intermixing in the quantum-dash (Qdash) system. Differential bandgap shifts of up to 80 nm and 112 nm have been observed from the IFVD and IID processes, respectively. Compared to the control (nonintermixed) lasers, the light-current characteristics for the 125 nm wavelength shifted Qdash lasers are not significantly changed, suggesting that the quality of the intermixed material is well preserved. The intermixed lasers exhibit a narrower linewidth as compared to the as-grown laser due to the improved dash homogeneity. The integrity of the material is retained after intermixing, suggesting the potential application for the planar integration of multiple active/passive Qdash-based devices on a single InP chip.

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KW - Interdiffusion

KW - Ion-implantation

KW - Photonic integrated circuits (PICs)

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KW - Quantum-dot intermixing

KW - Quantum-well (QW) intermixing

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Quantum dash intermixing

Abstract

Keywords

ASJC Scopus subject areas

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