Quantum Dot Avalanche Photodetector on Si Substrate

Baile Chen; Yating Wan; Zhiyang Xie; Jian Huang; Chen Shang; Justin Norman; Qiang Li; Kei May Lau; Arthur C. Gossard; John E. Bowers

Quantum Dot Avalanche Photodetector on Si Substrate

Baile Chen, Yating Wan, Zhiyang Xie, Jian Huang, Chen Shang, Justin Norman, Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate an InAs quantum dot (QD) avalanche photodetectors (APD) monolithically grown on Si substrate working at 1300 nm. Low dark current and high gain were demonstrated for these QD APDs.

Original language	English (US)
Title of host publication	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781943580767
State	Published - May 1 2020
Externally published	Yes

Cite this

@inproceedings{aee7c87c453b49c18e5e145083ae581e,

title = "Quantum Dot Avalanche Photodetector on Si Substrate",

abstract = "We demonstrate an InAs quantum dot (QD) avalanche photodetectors (APD) monolithically grown on Si substrate working at 1300 nm. Low dark current and high gain were demonstrated for these QD APDs.",

author = "Baile Chen and Yating Wan and Zhiyang Xie and Jian Huang and Chen Shang and Justin Norman and Qiang Li and Lau, {Kei May} and Gossard, {Arthur C.} and Bowers, {John E.}",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-18",

year = "2020",

month = may,

day = "1",

language = "English (US)",

isbn = "9781943580767",

booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - GEN

T1 - Quantum Dot Avalanche Photodetector on Si Substrate

AU - Chen, Baile

AU - Wan, Yating

AU - Xie, Zhiyang

AU - Huang, Jian

AU - Shang, Chen

AU - Norman, Justin

AU - Li, Qiang

AU - Lau, Kei May

AU - Gossard, Arthur C.

AU - Bowers, John E.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2020/5/1

Y1 - 2020/5/1

N2 - We demonstrate an InAs quantum dot (QD) avalanche photodetectors (APD) monolithically grown on Si substrate working at 1300 nm. Low dark current and high gain were demonstrated for these QD APDs.

AB - We demonstrate an InAs quantum dot (QD) avalanche photodetectors (APD) monolithically grown on Si substrate working at 1300 nm. Low dark current and high gain were demonstrated for these QD APDs.

UR - http://www.scopus.com/inward/record.url?scp=85091668616&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781943580767

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Quantum Dot Avalanche Photodetector on Si Substrate

Abstract

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