@inproceedings{16a0a7561589477a81b007f43a281c83,
title = "Quantum-dot intermixing enhancement using UV laser irradiation",
abstract = "We report the development of an intermixing technique in InGaAs/GaAs quantum-dot (QD) structure using the combination effects of pulsed UV laser irradiation and dielectric induced layer intermixing. Using this method, the quantum-dot intermixing rate is greatly enhanced by group-III vacancies generated by the dielectric cap during annealing. A bandgap shift as large as 180 meV has been measured from a sample exposed to 480 mJ/cm2, 150 pulses of 248 nm UV light , and annealed with a 200 nm thick SiO2 encapsulant layer. Under similar annealing conditions, the non-irradiated SiO2 and SixNy encapsulated QDs only exhibit bandgap shifts of 18 meV and 91 meV, respectively.",
author = "Djie, {Hery S.} and Wang, {Dong Ning} and Ooi, {Boon S.} and Hwang, {James C.M.}",
year = "2006",
language = "English (US)",
isbn = "0780395581",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "266--269",
booktitle = "2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings",
note = "2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ; Conference date: 07-05-2006 Through 11-05-2006",
}