Quantum dot intermixing using excimer laser irradiation

H. S. Djie; B. S. Ooi; O. Gunawan

doi:10.1063/1.2337537

Quantum dot intermixing using excimer laser irradiation

H. S. Djie^*, B. S. Ooi, O. Gunawan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The authors report a spatial control of the band gap in InGaAs/GaAs quantum dots (QDs) using the combined effects of pulsed excimer laser irradiation and impurity-free dielectric cap induced intermixing technique. A large band gap shift of up to 180 meV has been obtained under laser irradiation of 480 mJ/cm ² and 150 pulses to the SiO ₂ capped shallow QD structure, while the nonirradiated SiO ₂ and Si _xN _y capped QDs only exhibit band gap shifts of 18 and 91 meV, respectively.

Original language	English (US)
Article number	081901
Journal	Applied Physics Letters
Volume	89
Issue number	8
DOIs	https://doi.org/10.1063/1.2337537
State	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2337537

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title = "Quantum dot intermixing using excimer laser irradiation",

abstract = "The authors report a spatial control of the band gap in InGaAs/GaAs quantum dots (QDs) using the combined effects of pulsed excimer laser irradiation and impurity-free dielectric cap induced intermixing technique. A large band gap shift of up to 180 meV has been obtained under laser irradiation of 480 mJ/cm 2 and 150 pulses to the SiO 2 capped shallow QD structure, while the nonirradiated SiO 2 and Si xN y capped QDs only exhibit band gap shifts of 18 and 91 meV, respectively.",

author = "Djie, {H. S.} and Ooi, {B. S.} and O. Gunawan",

year = "2006",

doi = "10.1063/1.2337537",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

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T1 - Quantum dot intermixing using excimer laser irradiation

AU - Djie, H. S.

AU - Ooi, B. S.

AU - Gunawan, O.

PY - 2006

Y1 - 2006

N2 - The authors report a spatial control of the band gap in InGaAs/GaAs quantum dots (QDs) using the combined effects of pulsed excimer laser irradiation and impurity-free dielectric cap induced intermixing technique. A large band gap shift of up to 180 meV has been obtained under laser irradiation of 480 mJ/cm 2 and 150 pulses to the SiO 2 capped shallow QD structure, while the nonirradiated SiO 2 and Si xN y capped QDs only exhibit band gap shifts of 18 and 91 meV, respectively.

AB - The authors report a spatial control of the band gap in InGaAs/GaAs quantum dots (QDs) using the combined effects of pulsed excimer laser irradiation and impurity-free dielectric cap induced intermixing technique. A large band gap shift of up to 180 meV has been obtained under laser irradiation of 480 mJ/cm 2 and 150 pulses to the SiO 2 capped shallow QD structure, while the nonirradiated SiO 2 and Si xN y capped QDs only exhibit band gap shifts of 18 and 91 meV, respectively.

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U2 - 10.1063/1.2337537

DO - 10.1063/1.2337537

M3 - Article

AN - SCOPUS:33747819798

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

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ER -

Quantum dot intermixing using excimer laser irradiation

Abstract

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