Quantum dot lasers, amplifiers, modulators and photodetectors epitaxially grown on Si are promising for photonic integrated circuits. Laser performance is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiency of 87% and output power of 185 mW at 20 °C. Reliability tests show an extrapolated mean-time-to-failure of more than a million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on Si substrates for photonic integrated circuits that are compatible with CMOS foundries.
|Original language||English (US)|
|Title of host publication||2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - Aug 6 2018|