Quantum Dot Photonic Integrated Circuits on Silicon

John E. Bowers; Art Gossard; Daehwan Jung; Justin Norman; Yating Wan

Quantum Dot Photonic Integrated Circuits on Silicon

John E. Bowers, Art Gossard, Daehwan Jung, Justin Norman, Yating Wan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Quantum dot lasers, amplifiers, modulators and photodetectors epitaxially grown on Si are promising for photonic integrated circuits. Laser performance is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiency of 87% and output power of 185 mW at 20 °C. Reliability tests show an extrapolated mean-time-to-failure of more than a million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on Si substrates for photonic integrated circuits that are compatible with CMOS foundries.

Original language	English (US)
Title of host publication	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781943580422
State	Published - Aug 6 2018
Externally published	Yes

Cite this

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abstract = "Quantum dot lasers, amplifiers, modulators and photodetectors epitaxially grown on Si are promising for photonic integrated circuits. Laser performance is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiency of 87% and output power of 185 mW at 20 °C. Reliability tests show an extrapolated mean-time-to-failure of more than a million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on Si substrates for photonic integrated circuits that are compatible with CMOS foundries.",

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T1 - Quantum Dot Photonic Integrated Circuits on Silicon

AU - Bowers, John E.

AU - Gossard, Art

AU - Jung, Daehwan

AU - Norman, Justin

AU - Wan, Yating

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2018/8/6

Y1 - 2018/8/6

N2 - Quantum dot lasers, amplifiers, modulators and photodetectors epitaxially grown on Si are promising for photonic integrated circuits. Laser performance is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiency of 87% and output power of 185 mW at 20 °C. Reliability tests show an extrapolated mean-time-to-failure of more than a million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on Si substrates for photonic integrated circuits that are compatible with CMOS foundries.

AB - Quantum dot lasers, amplifiers, modulators and photodetectors epitaxially grown on Si are promising for photonic integrated circuits. Laser performance is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiency of 87% and output power of 185 mW at 20 °C. Reliability tests show an extrapolated mean-time-to-failure of more than a million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on Si substrates for photonic integrated circuits that are compatible with CMOS foundries.

UR - http://www.scopus.com/inward/record.url?scp=85052596217&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781943580422

BT - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Quantum Dot Photonic Integrated Circuits on Silicon

Abstract

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