TY - GEN
T1 - Quantum dot photonic integrated circuits on silicon
AU - Bowers, John E.
AU - Gossard, Art
AU - Jung, Daehwan
AU - Norman, Justin
AU - Wan, Yating
N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18
PY - 2018/1/1
Y1 - 2018/1/1
N2 - Quantum dot lasers, amplifiers, modulators and photodetectors epitaxially grown on Si are promising for photonic integrated circuits. Laser performance is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiency of 87% and output power of 185 mW at 20 °C. Reliability tests show an extrapolated mean-time-to-failure of more than a million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on Si substrates for photonic integrated circuits that are compatible with CMOS foundries.
AB - Quantum dot lasers, amplifiers, modulators and photodetectors epitaxially grown on Si are promising for photonic integrated circuits. Laser performance is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiency of 87% and output power of 185 mW at 20 °C. Reliability tests show an extrapolated mean-time-to-failure of more than a million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on Si substrates for photonic integrated circuits that are compatible with CMOS foundries.
UR - https://opg.optica.org/abstract.cfm?URI=CLEO_SI-2018-SW3B.1
UR - http://www.scopus.com/inward/record.url?scp=85048969658&partnerID=8YFLogxK
U2 - 10.1364/CLEO_SI.2018.SW3B.1
DO - 10.1364/CLEO_SI.2018.SW3B.1
M3 - Conference contribution
SN - 9781943580422
BT - Optics InfoBase Conference Papers
PB - Optica Publishing Group (formerly OSA)
ER -