Abstract
Quantum-dot-in-perovskite solids are excellent candidates for infrared light-emitting applications. The first generation of dot-in-perovskite light-emitting diodes (LEDs) has shown bright infrared electroluminescence with tunable emission wavelength; however, their performance has been limited by degradation of the active layer at practical operating voltages. This arises from the instability of the three-dimensional (3D) organolead halide perovskite matrix. Herein we report the first dot-in-perovskite solids that employ two-dimensional (2D) perovskites as the matrix. 2D perovskite passivation is achieved via an in situ alkylammonium/alkylamine substitution carried out during the quantum dot (QD) ligand exchange process. This single-step film preparation process enables deposition of the QD/perovskite active layers with thicknesses of 40 nm, over seven times thinner than the first-generation dot-in-perovskite thin films that relied on a multistep synthesis. The dot-in-perovskite film roughness improved from 31 nm for the first-generation films to 3 nm for films as a result of this new approach. The best devices exhibit external quantum efficiency peaks exceeding 2% and radiances of ∼1 W sr–1 m–2, with an improved breakdown voltage up to 7.5 V. Compared to first-generation dot-in-perovskites, this new process reduces materials consumptions 10-fold and represents a promising step toward manufacturable devices.
Original language | English (US) |
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Pages (from-to) | 830-836 |
Number of pages | 7 |
Journal | ACS Photonics |
Volume | 4 |
Issue number | 4 |
DOIs | |
State | Published - Mar 24 2017 |
Externally published | Yes |