Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation

B. S. Ooi; C. J. Hamilton; K. McIlvaney; A. C. Bryce; R. M. De La Rue; J. H. Marsh; J. S. Roberts

doi:10.1109/68.588128

Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation

B. S. Ooi^*, C. J. Hamilton, K. McIlvaney, A. C. Bryce, R. M. De La Rue, J. H. Marsh, J. S. Roberts

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We report the use of a pulsed laser irradiation technique, using multiphoton absorption, to promote quantum-well intermixing (QWI) in double-quantum-well (DQW) GaAs-AlGaAs laser structures. The process requires neither ion implantation nor the deposition of dielectric caps. Differential bandgap shifts of up to 40 meV have been obtained between the control and the laser irradiated samples. Bandgap tuned lasers were fabricated from the intermixed samples and exhibited negligible changes in slope efficiency and only small increases (15%) in threshold current compared to as-grown devices.

Original language	English (US)
Pages (from-to)	587-589
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	9
Issue number	5
DOIs	https://doi.org/10.1109/68.588128
State	Published - May 1997
Externally published	Yes

Keywords

Gallium arsenide
Integrated optoelectronics
Laser materials-processing applications
Laser radiation effects
Quantum wells
Quantum-well intermixing
Semiconductor lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.588128

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title = "Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation",

abstract = "We report the use of a pulsed laser irradiation technique, using multiphoton absorption, to promote quantum-well intermixing (QWI) in double-quantum-well (DQW) GaAs-AlGaAs laser structures. The process requires neither ion implantation nor the deposition of dielectric caps. Differential bandgap shifts of up to 40 meV have been obtained between the control and the laser irradiated samples. Bandgap tuned lasers were fabricated from the intermixed samples and exhibited negligible changes in slope efficiency and only small increases (15%) in threshold current compared to as-grown devices.",

keywords = "Gallium arsenide, Integrated optoelectronics, Laser materials-processing applications, Laser radiation effects, Quantum wells, Quantum-well intermixing, Semiconductor lasers",

author = "Ooi, {B. S.} and Hamilton, {C. J.} and K. McIlvaney and Bryce, {A. C.} and {De La Rue}, {R. M.} and Marsh, {J. H.} and Roberts, {J. S.}",

year = "1997",

month = may,

doi = "10.1109/68.588128",

language = "English (US)",

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pages = "587--589",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

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T1 - Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation

AU - Ooi, B. S.

AU - Hamilton, C. J.

AU - McIlvaney, K.

AU - Bryce, A. C.

AU - De La Rue, R. M.

AU - Marsh, J. H.

AU - Roberts, J. S.

PY - 1997/5

Y1 - 1997/5

N2 - We report the use of a pulsed laser irradiation technique, using multiphoton absorption, to promote quantum-well intermixing (QWI) in double-quantum-well (DQW) GaAs-AlGaAs laser structures. The process requires neither ion implantation nor the deposition of dielectric caps. Differential bandgap shifts of up to 40 meV have been obtained between the control and the laser irradiated samples. Bandgap tuned lasers were fabricated from the intermixed samples and exhibited negligible changes in slope efficiency and only small increases (15%) in threshold current compared to as-grown devices.

AB - We report the use of a pulsed laser irradiation technique, using multiphoton absorption, to promote quantum-well intermixing (QWI) in double-quantum-well (DQW) GaAs-AlGaAs laser structures. The process requires neither ion implantation nor the deposition of dielectric caps. Differential bandgap shifts of up to 40 meV have been obtained between the control and the laser irradiated samples. Bandgap tuned lasers were fabricated from the intermixed samples and exhibited negligible changes in slope efficiency and only small increases (15%) in threshold current compared to as-grown devices.

KW - Gallium arsenide

KW - Integrated optoelectronics

KW - Laser materials-processing applications

KW - Laser radiation effects

KW - Quantum wells

KW - Quantum-well intermixing

KW - Semiconductor lasers

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DO - 10.1109/68.588128

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SN - 1041-1135

VL - 9

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EP - 589

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 5

ER -

Quantum-well intermixing in GaAs-AlGaAs structures using pulsed laser irradiation

Abstract

Keywords

ASJC Scopus subject areas

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