@inproceedings{dc1f8382e3cb4b9b821718e3b24a1011,
title = "Quantum-well intermixing using Ge-doped sol-gel derived silica encapsulant layer",
abstract = "We report the intermixing enhancement using the Ge-doped sol-gel derived silica encapsulant layer in InGaAs/InGaAsP quantum-well laser structure. A bandgap shift of ∼64 nm has been observed from 16% Ge-doped silica capped sample at an annealing temperature of 630°C while the intermixing at the similar temperature can be effectively suppressed with the e-beam evaporated SiO2 encapsulant layer. Using our theoretical model, nearly identical activation energy of 1.7±0.5 eV was obtained from the intermixed sample with Ge-doped silica. Similar intermixing enhancement holds for high Ge-content cap in the intermixed GaAs/AlGaAs quantum-wells related to Ga vacancy injection. We postulate that the dissimilarity in interdiffusion behavior between 0% and 16% Ge-doped silica capped sample is only attributed to the difference in the number of beneficial vacancies that involve in the intermixing process.",
author = "Djie, {H. S.} and Ooi, {B. S.} and Ho, {C. K.F.} and T. Mei and K. Pita and Ngo, {N. Q.}",
year = "2006",
language = "English (US)",
isbn = "1558998454",
series = "Materials Research Society Symposium Proceedings",
pages = "115--120",
booktitle = "Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications",
note = "2005 MRS Fall Meeting ; Conference date: 28-11-2005 Through 01-12-2005",
}