TY - JOUR
T1 - Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors
AU - Tang, Xiao
AU - Li, Kuang-Hui
AU - Zhao, Yue
AU - Sui, Yanxin
AU - Liang, Huili
AU - Liu, Zeng
AU - Liao, Che-Hao
AU - Babatain, Wedyan
AU - Lin, Rongyu
AU - Wang, Chuanju
AU - Lu, Yi
AU - Alqatari, Feras S.
AU - Mei, Zengxia
AU - Tang, Weihua
AU - Li, Xiaohang
N1 - KAUST Repository Item: Exported on 2022-01-27
Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01
Acknowledgements: The authors acknowledge the support of KAUST Baseline BAS/1/1664-01-01, KAUST Competitive Research Grant URF/1/3437-01-01, URF/1/3771-01-01, GCC Research Council REP/1/3189-01-01, and National Natural Science Foundation of China (61874139). The authors also acknowledge support from Ulrich Buttner in the nanofabrication core lab, KAUST and Laurentiu Braic in the thin film deposition core lab, and KAUST for device fabrication and PLD maintenance. The authors acknowledge Prof. Thomas Anthopoulos at KAUST for his valuable advice and comments.
PY - 2021/12/22
Y1 - 2021/12/22
N2 - The epitaxial growth of technically important β-Ga2O3 semiconductor thin films has not been realized on flexible substrates due to the limitations of high-temperature crystallization conditions and lattice-matching requirements. We demonstrate the epitaxial growth of β-Ga2O3(-201) thin films on flexible CeO2(001)-buffered Hastelloy tape. The results indicate that CeO2(001) has a small bi-axial lattice mismatch with β-Ga2O3(-201), inducing simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated on the epitaxial β-Ga2O3-coated tape. Measurements reveal that the photodetectors have a responsivity of 4 × 104 mA/W, with an on/off ratio reaching 1000 under 254 nm incident light and 5 V bias voltage. Such a photoelectrical performance is within the mainstream level of β-Ga2O3-based photodetectors using conventional rigid single-crystal substrates. More importantly, it remained robust against more than 20,000 bending test cycles. Moreover, the technique paves the way for the direct in situ epitaxial growth of other flexible oxide semiconductor devices in the future.
AB - The epitaxial growth of technically important β-Ga2O3 semiconductor thin films has not been realized on flexible substrates due to the limitations of high-temperature crystallization conditions and lattice-matching requirements. We demonstrate the epitaxial growth of β-Ga2O3(-201) thin films on flexible CeO2(001)-buffered Hastelloy tape. The results indicate that CeO2(001) has a small bi-axial lattice mismatch with β-Ga2O3(-201), inducing simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated on the epitaxial β-Ga2O3-coated tape. Measurements reveal that the photodetectors have a responsivity of 4 × 104 mA/W, with an on/off ratio reaching 1000 under 254 nm incident light and 5 V bias voltage. Such a photoelectrical performance is within the mainstream level of β-Ga2O3-based photodetectors using conventional rigid single-crystal substrates. More importantly, it remained robust against more than 20,000 bending test cycles. Moreover, the technique paves the way for the direct in situ epitaxial growth of other flexible oxide semiconductor devices in the future.
UR - http://hdl.handle.net/10754/666241
UR - https://pubs.acs.org/doi/10.1021/acsami.1c15560
UR - http://www.scopus.com/inward/record.url?scp=85122582812&partnerID=8YFLogxK
U2 - 10.1021/acsami.1c15560
DO - 10.1021/acsami.1c15560
M3 - Article
C2 - 34936328
SN - 1944-8244
JO - ACS Applied Materials & Interfaces
JF - ACS Applied Materials & Interfaces
ER -