Quasi-supercontinuum interband lasing characteristics of quantum dot nanostructures

C. L. Tan; Y. Wang; H. S. Djie; B. S. Ooi

doi:10.1109/NUSOD.2008.4668263

Quasi-supercontinuum interband lasing characteristics of quantum dot nanostructures

C. L. Tan, Y. Wang, H. S. Djie, B. S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present the first analysis of wideband-stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (AE) is comparable to dot inhomogeneity.

Original language	English (US)
Title of host publication	2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08
Pages	103-104
Number of pages	2
DOIs	https://doi.org/10.1109/NUSOD.2008.4668263
State	Published - 2008
Externally published	Yes
Event	2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 - Nottingham, United Kingdom Duration: Sep 1 2008 → Sep 4 2008

Publication series

Name	2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08

Other

Other	2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08
Country/Territory	United Kingdom
City	Nottingham
Period	09/1/08 → 09/4/08

ASJC Scopus subject areas

Computational Theory and Mathematics
Electrical and Electronic Engineering

Access to Document

10.1109/NUSOD.2008.4668263

Cite this

Tan, C. L., Wang, Y., Djie, H. S., & Ooi, B. S. (2008). Quasi-supercontinuum interband lasing characteristics of quantum dot nanostructures. In 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 (pp. 103-104). Article 4668263 (2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08). https://doi.org/10.1109/NUSOD.2008.4668263

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title = "Quasi-supercontinuum interband lasing characteristics of quantum dot nanostructures",

abstract = "We present the first analysis of wideband-stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (AE) is comparable to dot inhomogeneity.",

author = "Tan, {C. L.} and Y. Wang and Djie, {H. S.} and Ooi, {B. S.}",

year = "2008",

doi = "10.1109/NUSOD.2008.4668263",

language = "English (US)",

isbn = "9781424423071",

series = "2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08",

pages = "103--104",

booktitle = "2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08",

note = "2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 ; Conference date: 01-09-2008 Through 04-09-2008",

}

Tan, CL, Wang, Y, Djie, HS & Ooi, BS 2008, Quasi-supercontinuum interband lasing characteristics of quantum dot nanostructures. in 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08., 4668263, 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08, pp. 103-104, 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08, Nottingham, United Kingdom, 09/1/08. https://doi.org/10.1109/NUSOD.2008.4668263

Quasi-supercontinuum interband lasing characteristics of quantum dot nanostructures. / Tan, C. L.; Wang, Y.; Djie, H. S. et al.
2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08. 2008. p. 103-104 4668263 (2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Djie, H. S.

AU - Ooi, B. S.

PY - 2008

Y1 - 2008

N2 - We present the first analysis of wideband-stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (AE) is comparable to dot inhomogeneity.

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DO - 10.1109/NUSOD.2008.4668263

M3 - Conference contribution

AN - SCOPUS:57649217419

SN - 9781424423071

T3 - 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08

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BT - 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08

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Y2 - 1 September 2008 through 4 September 2008

ER -

Quasi-supercontinuum interband lasing characteristics of quantum dot nanostructures

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