TY - JOUR
T1 - Quasi Two-Dimensional Dye-Sensitized In 2 O 3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications
AU - Mottram, Alexander D.
AU - Lin, Yen-Hung
AU - Pattanasattayavong, Pichaya
AU - Zhao, Kui
AU - Amassian, Aram
AU - Anthopoulos, Thomas D.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: A.M. and T.D.A. acknowledge the Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/G037515/1. P.P. acknowledges the Anandamahidol Foundation, Thailand, for financial support.
PY - 2016/2/10
Y1 - 2016/2/10
N2 - © 2016 American Chemical Society. We report the development of dye-sensitized thin-film phototransistors consisting of an ultrathin layer (92% in the wavelength range 400-700 nm. Importantly, the phototransistors are processed from solution-phase at temperatures below 200 °C hence making the technology compatible with inexpensive and temperature sensitive flexible substrate materials such as plastic.
AB - © 2016 American Chemical Society. We report the development of dye-sensitized thin-film phototransistors consisting of an ultrathin layer (92% in the wavelength range 400-700 nm. Importantly, the phototransistors are processed from solution-phase at temperatures below 200 °C hence making the technology compatible with inexpensive and temperature sensitive flexible substrate materials such as plastic.
UR - http://hdl.handle.net/10754/621639
UR - https://pubs.acs.org/doi/10.1021/acsami.5b11210
UR - http://www.scopus.com/inward/record.url?scp=84962599598&partnerID=8YFLogxK
U2 - 10.1021/acsami.5b11210
DO - 10.1021/acsami.5b11210
M3 - Article
C2 - 26863603
SN - 1944-8244
VL - 8
SP - 4894
EP - 4902
JO - ACS Applied Materials & Interfaces
JF - ACS Applied Materials & Interfaces
IS - 7
ER -