Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures

D. Lüerßen; R. Bleher; H. Richter; Th Schimmel; H. Kalt; A. Rosenauer; D. Litvinov; A. Kamilli; D. Gerthsen; K. Ohkawa; B. Jobst; D. Hommel

doi:10.1063/1.125502

Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures

D. Lüerßen^*, R. Bleher, H. Richter, Th Schimmel, H. Kalt, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, K. Ohkawa, B. Jobst, D. Hommel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures are found to induce enhanced radiative recombination visible as pairs of bright spots in microphotoluminescence intensity maps. Structural investigation by atomic-force microscopy and transmission electron microscopy (plan view as well as cross section) reveal that a widening and bending of quantum wells occurs when they are intersected by Frank-type stacking faults. The enlargement of the well width by up to 12 bilayers evokes an efficient localization of excitons. The localizing potential related to Shockley-type stacking-fault pairs is found to be much shallower.

Original language	English (US)
Pages (from-to)	3944-3946
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	25
DOIs	https://doi.org/10.1063/1.125502
State	Published - Dec 20 1999
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures",

abstract = "Stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures are found to induce enhanced radiative recombination visible as pairs of bright spots in microphotoluminescence intensity maps. Structural investigation by atomic-force microscopy and transmission electron microscopy (plan view as well as cross section) reveal that a widening and bending of quantum wells occurs when they are intersected by Frank-type stacking faults. The enlargement of the well width by up to 12 bilayers evokes an efficient localization of excitons. The localizing potential related to Shockley-type stacking-fault pairs is found to be much shallower.",

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doi = "10.1063/1.125502",

language = "English (US)",

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journal = "Applied Physics Letters",

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T1 - Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures

AU - Lüerßen, D.

AU - Bleher, R.

AU - Richter, H.

AU - Schimmel, Th

AU - Kalt, H.

AU - Rosenauer, A.

AU - Litvinov, D.

AU - Kamilli, A.

AU - Gerthsen, D.

AU - Ohkawa, K.

AU - Jobst, B.

AU - Hommel, D.

PY - 1999/12/20

Y1 - 1999/12/20

N2 - Stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures are found to induce enhanced radiative recombination visible as pairs of bright spots in microphotoluminescence intensity maps. Structural investigation by atomic-force microscopy and transmission electron microscopy (plan view as well as cross section) reveal that a widening and bending of quantum wells occurs when they are intersected by Frank-type stacking faults. The enlargement of the well width by up to 12 bilayers evokes an efficient localization of excitons. The localizing potential related to Shockley-type stacking-fault pairs is found to be much shallower.

AB - Stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures are found to induce enhanced radiative recombination visible as pairs of bright spots in microphotoluminescence intensity maps. Structural investigation by atomic-force microscopy and transmission electron microscopy (plan view as well as cross section) reveal that a widening and bending of quantum wells occurs when they are intersected by Frank-type stacking faults. The enlargement of the well width by up to 12 bilayers evokes an efficient localization of excitons. The localizing potential related to Shockley-type stacking-fault pairs is found to be much shallower.

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U2 - 10.1063/1.125502

DO - 10.1063/1.125502

M3 - Article

AN - SCOPUS:18844471548

SN - 0003-6951

VL - 75

SP - 3944

EP - 3946

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures

Abstract

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