TY - GEN
T1 - Raman study of localized recrystallization of amorphous silicon induced by laser beam
AU - Tabet, Nouar A.
AU - Al-Sayoud, Abduljabar
AU - Said, Seyed
AU - Yang, Xiaoming
AU - Yang, Yang
AU - Syed, Ahad A.
AU - Diallo, Elhadj
AU - Wang, Zhihong
AU - Wang, Xianbin
AU - Johlin, Eric
AU - Simmons, Christine
AU - Buonassisi, Tonio
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2012/6
Y1 - 2012/6
N2 - The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter. © 2012 IEEE.
AB - The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter. © 2012 IEEE.
UR - http://hdl.handle.net/10754/564556
UR - http://ieeexplore.ieee.org/document/6317637/
UR - http://www.scopus.com/inward/record.url?scp=84869415006&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2012.6317637
DO - 10.1109/PVSC.2012.6317637
M3 - Conference contribution
SN - 9781467300643
SP - 364
EP - 366
BT - 2012 38th IEEE Photovoltaic Specialists Conference
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -