Rapid and up-scalable manufacturing of gigahertz nanogap diodes

Kalaivanan Loganathan; Hendrik Faber; Emre Yengel; Akmaral Seitkhan; Azamat Bakytbekov; Emre Yarali; Begimai Adilbekova; Afnan AlBatati; Yuanbao Lin; Zainab Felemban; Shuai Yang; Weiwei Li; Dimitra G Georgiadou; Atif Shamim; Elefterios Lidorikis; Thomas D. Anthopoulos

doi:10.1038/s41467-022-30876-6

Rapid and up-scalable manufacturing of gigahertz nanogap diodes

Kalaivanan Loganathan, Hendrik Faber, Emre Yengel, Akmaral Seitkhan, Azamat Bakytbekov, Emre Yarali, Begimai Adilbekova, Afnan AlBatati, Yuanbao Lin, Zainab Felemban, Shuai Yang, Weiwei Li, Dimitra G Georgiadou, Atif Shamim, Elefterios Lidorikis, Thomas D. Anthopoulos

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The massive deployment of fifth generation and internet of things technologies requires precise and high-throughput fabrication techniques for the mass production of radio frequency electronics. We use printable indium-gallium-zinc-oxide semiconductor in spontaneously formed self-aligned 100 GHz. Rectifier circuits constructed with these co-planar diodes can operate at ~47 GHz (extrinsic), making them the fastest large-area electronic devices demonstrated to date.

Original language	English (US)
Journal	Nature Communications
Volume	13
Issue number	1
DOIs	https://doi.org/10.1038/s41467-022-30876-6
State	Published - Jun 7 2022

ASJC Scopus subject areas

General Biochemistry, Genetics and Molecular Biology
General Chemistry
General Physics and Astronomy

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10.1038/s41467-022-30876-6

https://repository.kaust.edu.sa/bitstream/10754/678784/1/s41467-022-30876-6.pdf

Cite this

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title = "Rapid and up-scalable manufacturing of gigahertz nanogap diodes",

abstract = "The massive deployment of fifth generation and internet of things technologies requires precise and high-throughput fabrication techniques for the mass production of radio frequency electronics. We use printable indium-gallium-zinc-oxide semiconductor in spontaneously formed self-aligned 100 GHz. Rectifier circuits constructed with these co-planar diodes can operate at ~47 GHz (extrinsic), making them the fastest large-area electronic devices demonstrated to date.",

author = "Kalaivanan Loganathan and Hendrik Faber and Emre Yengel and Akmaral Seitkhan and Azamat Bakytbekov and Emre Yarali and Begimai Adilbekova and Afnan AlBatati and Yuanbao Lin and Zainab Felemban and Shuai Yang and Weiwei Li and Georgiadou, {Dimitra G} and Atif Shamim and Elefterios Lidorikis and Anthopoulos, {Thomas D.}",

note = "KAUST Repository Item: Exported on 2022-06-09 Acknowledged KAUST grant number(s): OSR-2020-CRG9–4347, OSR-2018-CARF/CCF-3079 Acknowledgements: This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079 and Award No: OSR-2020-CRG9–4347. T.D.A. and K.L. would like to acknowledge for the illustration created by Ivan Gromicho, scientific illustrator, research communication and publication services, office of the vice president for research, King Abdullah University of Science and Technology (KAUST).",

year = "2022",

month = jun,

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doi = "10.1038/s41467-022-30876-6",

language = "English (US)",

volume = "13",

journal = "Nature Communications",

issn = "2041-1723",

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T1 - Rapid and up-scalable manufacturing of gigahertz nanogap diodes

AU - Loganathan, Kalaivanan

AU - Faber, Hendrik

AU - Yengel, Emre

AU - Seitkhan, Akmaral

AU - Bakytbekov, Azamat

AU - Yarali, Emre

AU - Adilbekova, Begimai

AU - AlBatati, Afnan

AU - Lin, Yuanbao

AU - Felemban, Zainab

AU - Yang, Shuai

AU - Li, Weiwei

AU - Georgiadou, Dimitra G

AU - Shamim, Atif

AU - Lidorikis, Elefterios

AU - Anthopoulos, Thomas D.

N1 - KAUST Repository Item: Exported on 2022-06-09 Acknowledged KAUST grant number(s): OSR-2020-CRG9–4347, OSR-2018-CARF/CCF-3079 Acknowledgements: This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079 and Award No: OSR-2020-CRG9–4347. T.D.A. and K.L. would like to acknowledge for the illustration created by Ivan Gromicho, scientific illustrator, research communication and publication services, office of the vice president for research, King Abdullah University of Science and Technology (KAUST).

PY - 2022/6/7

Y1 - 2022/6/7

N2 - The massive deployment of fifth generation and internet of things technologies requires precise and high-throughput fabrication techniques for the mass production of radio frequency electronics. We use printable indium-gallium-zinc-oxide semiconductor in spontaneously formed self-aligned 100 GHz. Rectifier circuits constructed with these co-planar diodes can operate at ~47 GHz (extrinsic), making them the fastest large-area electronic devices demonstrated to date.

AB - The massive deployment of fifth generation and internet of things technologies requires precise and high-throughput fabrication techniques for the mass production of radio frequency electronics. We use printable indium-gallium-zinc-oxide semiconductor in spontaneously formed self-aligned 100 GHz. Rectifier circuits constructed with these co-planar diodes can operate at ~47 GHz (extrinsic), making them the fastest large-area electronic devices demonstrated to date.

UR - http://hdl.handle.net/10754/678784

UR - https://www.nature.com/articles/s41467-022-30876-6

U2 - 10.1038/s41467-022-30876-6

DO - 10.1038/s41467-022-30876-6

M3 - Article

C2 - 35672406

SN - 2041-1723

VL - 13

JO - Nature Communications

JF - Nature Communications

IS - 1

ER -

Rapid and up-scalable manufacturing of gigahertz nanogap diodes

Abstract

ASJC Scopus subject areas

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