Real time monitoring of pentacene growth on Si O2 from a supersonic source

S. Hong; A. Amassian; A. R. Woll; S. Bhargava; J. D. Ferguson; G. G. Malliaras; J. D. Brock; J. R. Engstrom

doi:10.1063/1.2946497

Real time monitoring of pentacene growth on Si O2 from a supersonic source

S. Hong^*, A. Amassian, A. R. Woll, S. Bhargava, J. D. Ferguson, G. G. Malliaras, J. D. Brock, J. R. Engstrom

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

Thin film growth of pentacene on SiO₂ using a supersonic source has been investigated with in situ real time synchrotron x-ray scattering and ex situ atomic force microscopy, focusing on the effects of incident kinetic energy Ei and growth rate GR on the evolution of surface roughness and the crystalline structure of the thin films. For the conditions examined here, Ei =2.5-7.2 eV and GR=0.0015-0.2 ML s-1, the thin film phase is always observed. We find that while the effect of Ei on interlayer transport is minimal, at high growth rates, slightly smoother films are observed.

Original language	English (US)
Article number	253304
Journal	Applied Physics Letters
Volume	92
Issue number	25
DOIs	https://doi.org/10.1063/1.2946497
State	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2946497

Cite this

@article{ba1de514d445463ca699961f2700ae7f,

title = "Real time monitoring of pentacene growth on Si O2 from a supersonic source",

abstract = "Thin film growth of pentacene on SiO2 using a supersonic source has been investigated with in situ real time synchrotron x-ray scattering and ex situ atomic force microscopy, focusing on the effects of incident kinetic energy Ei and growth rate GR on the evolution of surface roughness and the crystalline structure of the thin films. For the conditions examined here, Ei =2.5-7.2 eV and GR=0.0015-0.2 ML s-1, the thin film phase is always observed. We find that while the effect of Ei on interlayer transport is minimal, at high growth rates, slightly smoother films are observed.",

author = "S. Hong and A. Amassian and Woll, {A. R.} and S. Bhargava and Ferguson, {J. D.} and Malliaras, {G. G.} and Brock, {J. D.} and Engstrom, {J. R.}",

year = "2008",

doi = "10.1063/1.2946497",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "25",

}

TY - JOUR

T1 - Real time monitoring of pentacene growth on Si O2 from a supersonic source

AU - Hong, S.

AU - Amassian, A.

AU - Woll, A. R.

AU - Bhargava, S.

AU - Ferguson, J. D.

AU - Malliaras, G. G.

AU - Brock, J. D.

AU - Engstrom, J. R.

PY - 2008

Y1 - 2008

N2 - Thin film growth of pentacene on SiO2 using a supersonic source has been investigated with in situ real time synchrotron x-ray scattering and ex situ atomic force microscopy, focusing on the effects of incident kinetic energy Ei and growth rate GR on the evolution of surface roughness and the crystalline structure of the thin films. For the conditions examined here, Ei =2.5-7.2 eV and GR=0.0015-0.2 ML s-1, the thin film phase is always observed. We find that while the effect of Ei on interlayer transport is minimal, at high growth rates, slightly smoother films are observed.

AB - Thin film growth of pentacene on SiO2 using a supersonic source has been investigated with in situ real time synchrotron x-ray scattering and ex situ atomic force microscopy, focusing on the effects of incident kinetic energy Ei and growth rate GR on the evolution of surface roughness and the crystalline structure of the thin films. For the conditions examined here, Ei =2.5-7.2 eV and GR=0.0015-0.2 ML s-1, the thin film phase is always observed. We find that while the effect of Ei on interlayer transport is minimal, at high growth rates, slightly smoother films are observed.

UR - http://www.scopus.com/inward/record.url?scp=46049086189&partnerID=8YFLogxK

U2 - 10.1063/1.2946497

DO - 10.1063/1.2946497

M3 - Article

AN - SCOPUS:46049086189

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 253304

ER -

Real time monitoring of pentacene growth on Si O2 from a supersonic source

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this