We report on the growth of a completely relaxed, high- crystalline-quality, and thick GaInN layer on a grooved m-plane GaN template using sidewall epitaxial lateral overgrowth (SELO) technology. We grew GaInN-based multiple quantum wells (MQWs) on this GaInN layer, and the PL intensity was compared with that for the same GaInN/GaN MQWs on m-plane GaN grown by SELO. The PL peak intensity obtained from the GaInN/GaN MQW on the high-crystalline-quality thick GaInN on grooved GaN was approximately 1.7 times higher than that on the SELO m-plane GaN template. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|Original language||English (US)|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Issue number||SUPPL. 2|
|State||Published - Jul 1 2009|
ASJC Scopus subject areas
- Condensed Matter Physics