Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth

Ryota Senda; Aya Miura; Takemasa Hayakawa; Takeshi Kawashima; Daisuke Iida; Tetsuya Nagai; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki

doi:10.1143/JJAP.46.L948

Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth

Ryota Senda, Aya Miura, Takemasa Hayakawa, Takeshi Kawashima, Daisuke Iida, Tetsuya Nagai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

A high-crystalline-quality thick m-plane Ga0.92In 0.08N film has been realized by epitaxial lateral overgrowth (ELO). The photoluminescence intensity of thick ELO-GaInN is about 6 times stronger than that of conventional thick GaInN. We fabricated a light-emitting diode (LED) having a GaInN/GaN multiquantum wells (MQWs) active layer on an ELO-GaInN layer. Satellite peaks of (101̄0) in the 2θ/ω-scan X-ray diffraction profile from this LED can be clearly observed, suggesting that MQWs having a sharp interface are grown. This new LED exhibits blue-light emission with a peak wavelength of 450 nm. © 2007 The Japan Society of Applied Physics.

Original language	English (US)
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	46
Issue number	36-40
DOIs	https://doi.org/10.1143/JJAP.46.L948
State	Published - Oct 12 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1143/JJAP.46.L948

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@article{f8153fde4a0e4f079f1a581aacc0d4fd,

title = "Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth",

abstract = "A high-crystalline-quality thick m-plane Ga0.92In 0.08N film has been realized by epitaxial lateral overgrowth (ELO). The photoluminescence intensity of thick ELO-GaInN is about 6 times stronger than that of conventional thick GaInN. We fabricated a light-emitting diode (LED) having a GaInN/GaN multiquantum wells (MQWs) active layer on an ELO-GaInN layer. Satellite peaks of (10{\=1}0) in the 2θ/ω-scan X-ray diffraction profile from this LED can be clearly observed, suggesting that MQWs having a sharp interface are grown. This new LED exhibits blue-light emission with a peak wavelength of 450 nm. {\textcopyright} 2007 The Japan Society of Applied Physics.",

author = "Ryota Senda and Aya Miura and Takemasa Hayakawa and Takeshi Kawashima and Daisuke Iida and Tetsuya Nagai and Motoaki Iwaya and Satoshi Kamiyama and Hiroshi Amano and Isamu Akasaki",

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doi = "10.1143/JJAP.46.L948",

language = "English (US)",

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journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth

AU - Senda, Ryota

AU - Miura, Aya

AU - Hayakawa, Takemasa

AU - Kawashima, Takeshi

AU - Iida, Daisuke

AU - Nagai, Tetsuya

AU - Iwaya, Motoaki

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2007/10/12

Y1 - 2007/10/12

N2 - A high-crystalline-quality thick m-plane Ga0.92In 0.08N film has been realized by epitaxial lateral overgrowth (ELO). The photoluminescence intensity of thick ELO-GaInN is about 6 times stronger than that of conventional thick GaInN. We fabricated a light-emitting diode (LED) having a GaInN/GaN multiquantum wells (MQWs) active layer on an ELO-GaInN layer. Satellite peaks of (101̄0) in the 2θ/ω-scan X-ray diffraction profile from this LED can be clearly observed, suggesting that MQWs having a sharp interface are grown. This new LED exhibits blue-light emission with a peak wavelength of 450 nm. © 2007 The Japan Society of Applied Physics.

AB - A high-crystalline-quality thick m-plane Ga0.92In 0.08N film has been realized by epitaxial lateral overgrowth (ELO). The photoluminescence intensity of thick ELO-GaInN is about 6 times stronger than that of conventional thick GaInN. We fabricated a light-emitting diode (LED) having a GaInN/GaN multiquantum wells (MQWs) active layer on an ELO-GaInN layer. Satellite peaks of (101̄0) in the 2θ/ω-scan X-ray diffraction profile from this LED can be clearly observed, suggesting that MQWs having a sharp interface are grown. This new LED exhibits blue-light emission with a peak wavelength of 450 nm. © 2007 The Japan Society of Applied Physics.

UR - https://iopscience.iop.org/article/10.1143/JJAP.46.L948

UR - http://www.scopus.com/inward/record.url?scp=36048989287&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.L948

DO - 10.1143/JJAP.46.L948

M3 - Article

SN - 0021-4922

VL - 46

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 36-40

ER -

Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth

Abstract

ASJC Scopus subject areas

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