Realization of Large Area Co20Fe60B20-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Mohamad G. Moinuddin, Aijaz H. Lone, Srikant Srinivasan, Satinder K. Sharma*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


This study reports the current-induced switching of a Co20Fe60B20/MgO/Co20Fe60B20-based perpendicular magnetic tunnel junction (p-MTJ) with a [Co/Pt]4 stack as a synthetic anti-ferromagnetic (SAF) layer. Electrical and spectroscopic evidence of p-MTJs reveals that the pinning of the Co20Fe60B20 layer by the SAF through a Ta spacer layer enhances the switching resistance after annealing at 650 K (375 °C). A drastic improvement of 6 times in the tunneling magnetoresistance (TMR) was observed after annealing in an external magnetic field (14% for as-deposited and 83% for annealed both for zero bias). The TMR also shows a gradual increased behavior with bias at room temperature, which may be attributed to the multi-domain switching with increase in current. The analogous SAF-based MTJ devices were modeled using the non-equilibrium Green's function (NEGF) to validate the experimental results. The existence of a stable TMR and the low switching current density of the fabricated p-MTJ structures provides higher reliability and low-power operation. This makes it attractive for next-generation MTJ applications, especially for embedded memory, system-on-chip, IoT, and neuromorphic computing applications.

Original languageEnglish (US)
Pages (from-to)2268-2278
Number of pages11
JournalACS Applied Electronic Materials
Issue number11
StatePublished - Nov 26 2019


  • increasing tunneling magnetoresistance
  • low switching current density
  • non-equilibrium Green's function
  • perpendicular magnetic tunnel junction
  • synthetic anti-ferromagnetic

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrochemistry
  • Materials Chemistry


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