TY - JOUR
T1 - Realization of p-type conduction in compositionally graded quaternary AlInGaN
AU - Zhao, Chunlei
AU - Deng, Gaoqiang
AU - Zhang, Lidong
AU - Wang, Yang
AU - Niu, Yunfei
AU - Yu, Jiaqi
AU - Shi, Zhifeng
AU - Du, Guotong
AU - Li, Xiaohang
AU - Zhang, Yuantao
N1 - KAUST Repository Item: Exported on 2022-09-12
Acknowledgements: This work was supported by the National Key R&D Program of China (Nos.2021YFB3601000, 2021YFB3601002), the National Natural Science Foundation of China (Nos. 62074069, 61734001, and 62104078), and the Science and Technology Developing Project of Jilin Province (Nos. 20200801013GH and 20220201065GX).
PY - 2022/9/1
Y1 - 2022/9/1
N2 - Quaternary AlInGaN alloy offers more degree of freedom in independently adjusting the band gap and lattice constant, and it shows the great potential in the fabrication of nitride optoelectronic and electronic devices. In this work, AlInGaN films were grown by metal-organic chemical vapor deposition and the p-type conduction was realized in compositionally graded quaternary AlInGaN. The element compositions in AlInGaN were confirmed by secondary ion mass spectrometry. The structural properties such as layer thickness, lattice polarity and surface morphology of the epilayers were characterized by cross-sectional scanning transmission electron microscopy and atomic force microscopy (AFM). The measured surface AFM images verify that the surface morphology of the quaternary AlInGaN film is smooth and it is free from V-shaped pits. Hall effect measurement results show that the grown graded AlInGaN is p-type with the hole concentration of ∼7.3 × 1016 cm−3 at room temperature. The realization of p-type conduction in AlInGaN can enrich the polarization engineering and the device structures of nitride semiconductors.
AB - Quaternary AlInGaN alloy offers more degree of freedom in independently adjusting the band gap and lattice constant, and it shows the great potential in the fabrication of nitride optoelectronic and electronic devices. In this work, AlInGaN films were grown by metal-organic chemical vapor deposition and the p-type conduction was realized in compositionally graded quaternary AlInGaN. The element compositions in AlInGaN were confirmed by secondary ion mass spectrometry. The structural properties such as layer thickness, lattice polarity and surface morphology of the epilayers were characterized by cross-sectional scanning transmission electron microscopy and atomic force microscopy (AFM). The measured surface AFM images verify that the surface morphology of the quaternary AlInGaN film is smooth and it is free from V-shaped pits. Hall effect measurement results show that the grown graded AlInGaN is p-type with the hole concentration of ∼7.3 × 1016 cm−3 at room temperature. The realization of p-type conduction in AlInGaN can enrich the polarization engineering and the device structures of nitride semiconductors.
UR - http://hdl.handle.net/10754/681125
UR - https://linkinghub.elsevier.com/retrieve/pii/S277301232200190X
UR - http://www.scopus.com/inward/record.url?scp=85137060318&partnerID=8YFLogxK
U2 - 10.1016/j.micrna.2022.207377
DO - 10.1016/j.micrna.2022.207377
M3 - Article
SN - 2773-0123
VL - 170
SP - 207377
JO - Micro and Nanostructures
JF - Micro and Nanostructures
ER -