Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy

Daehwan Jung, Justin Norman, Yating Wan, Songtao Liu, Robert Herrick, Jennifer Selvidge, Kunal Mukherjee, Arthur C. Gossard, John E. Bowers

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


Recent advances in InAs quantum dot (QD) lasers epitaxially grown on on-axis (001) silicon are reported. Fabry-Perot QD lasers show a CW threshold current of 4.8 mA at 20 °C, extrapolated laser lifetimes more than 10 million hours when aged at 35 °C, NRZ direct modulation up to 12 Gbps, and low linewidth enhancement factor of ≈0.1. Ultra-small microring QD lasers reveal a CW threshold of 0.5 mA and single-section mode-locked QD lasers demonstrate 490 fs ultra-short pulses at a 31 GHz repetition frequency. Possible ways to grow QD lasers on Si without misfit dislocations in active region are considered in order to further enhance reliability of QD Si lasers at high aging temperature and aging current density.
Original languageEnglish (US)
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number1
StatePublished - Jan 9 2019
Externally publishedYes

ASJC Scopus subject areas

  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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