Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy

Daehwan Jung; Justin Norman; Yating Wan; Songtao Liu; Robert Herrick; Jennifer Selvidge; Kunal Mukherjee; Arthur C. Gossard; John E. Bowers

doi:10.1002/pssa.201800602

Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy

Daehwan Jung, Justin Norman, Yating Wan, Songtao Liu, Robert Herrick, Jennifer Selvidge, Kunal Mukherjee, Arthur C. Gossard, John E. Bowers

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Recent advances in InAs quantum dot (QD) lasers epitaxially grown on on-axis (001) silicon are reported. Fabry-Perot QD lasers show a CW threshold current of 4.8 mA at 20 °C, extrapolated laser lifetimes more than 10 million hours when aged at 35 °C, NRZ direct modulation up to 12 Gbps, and low linewidth enhancement factor of ≈0.1. Ultra-small microring QD lasers reveal a CW threshold of 0.5 mA and single-section mode-locked QD lasers demonstrate 490 fs ultra-short pulses at a 31 GHz repetition frequency. Possible ways to grow QD lasers on Si without misfit dislocations in active region are considered in order to further enhance reliability of QD Si lasers at high aging temperature and aging current density.

Original language	English (US)
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	216
Issue number	1
DOIs	https://doi.org/10.1002/pssa.201800602
State	Published - Jan 9 2019
Externally published	Yes

ASJC Scopus subject areas

Materials Chemistry
Surfaces, Coatings and Films
Surfaces and Interfaces
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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10.1002/pssa.201800602

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@article{8d1570412af644618d73c15452f271f5,

title = "Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy",

abstract = "Recent advances in InAs quantum dot (QD) lasers epitaxially grown on on-axis (001) silicon are reported. Fabry-Perot QD lasers show a CW threshold current of 4.8 mA at 20 °C, extrapolated laser lifetimes more than 10 million hours when aged at 35 °C, NRZ direct modulation up to 12 Gbps, and low linewidth enhancement factor of ≈0.1. Ultra-small microring QD lasers reveal a CW threshold of 0.5 mA and single-section mode-locked QD lasers demonstrate 490 fs ultra-short pulses at a 31 GHz repetition frequency. Possible ways to grow QD lasers on Si without misfit dislocations in active region are considered in order to further enhance reliability of QD Si lasers at high aging temperature and aging current density.",

author = "Daehwan Jung and Justin Norman and Yating Wan and Songtao Liu and Robert Herrick and Jennifer Selvidge and Kunal Mukherjee and Gossard, {Arthur C.} and Bowers, {John E.}",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-18",

year = "2019",

month = jan,

day = "9",

doi = "10.1002/pssa.201800602",

language = "English (US)",

volume = "216",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley",

number = "1",

}

TY - JOUR

T1 - Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy

AU - Jung, Daehwan

AU - Norman, Justin

AU - Wan, Yating

AU - Liu, Songtao

AU - Herrick, Robert

AU - Selvidge, Jennifer

AU - Mukherjee, Kunal

AU - Gossard, Arthur C.

AU - Bowers, John E.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2019/1/9

Y1 - 2019/1/9

N2 - Recent advances in InAs quantum dot (QD) lasers epitaxially grown on on-axis (001) silicon are reported. Fabry-Perot QD lasers show a CW threshold current of 4.8 mA at 20 °C, extrapolated laser lifetimes more than 10 million hours when aged at 35 °C, NRZ direct modulation up to 12 Gbps, and low linewidth enhancement factor of ≈0.1. Ultra-small microring QD lasers reveal a CW threshold of 0.5 mA and single-section mode-locked QD lasers demonstrate 490 fs ultra-short pulses at a 31 GHz repetition frequency. Possible ways to grow QD lasers on Si without misfit dislocations in active region are considered in order to further enhance reliability of QD Si lasers at high aging temperature and aging current density.

AB - Recent advances in InAs quantum dot (QD) lasers epitaxially grown on on-axis (001) silicon are reported. Fabry-Perot QD lasers show a CW threshold current of 4.8 mA at 20 °C, extrapolated laser lifetimes more than 10 million hours when aged at 35 °C, NRZ direct modulation up to 12 Gbps, and low linewidth enhancement factor of ≈0.1. Ultra-small microring QD lasers reveal a CW threshold of 0.5 mA and single-section mode-locked QD lasers demonstrate 490 fs ultra-short pulses at a 31 GHz repetition frequency. Possible ways to grow QD lasers on Si without misfit dislocations in active region are considered in order to further enhance reliability of QD Si lasers at high aging temperature and aging current density.

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssa.201800602

UR - http://www.scopus.com/inward/record.url?scp=85059288176&partnerID=8YFLogxK

U2 - 10.1002/pssa.201800602

DO - 10.1002/pssa.201800602

M3 - Article

SN - 1862-6300

VL - 216

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 1

ER -

Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy

Abstract

ASJC Scopus subject areas

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