Gallium oxide (Ga2O3) is rapidly emerging as a material of choice for the development of solar blind photodetectors and power electronic devices which are particularly suitable in harsh environment applications, owing to its wide bandgap and extremely high Baliga figure of merit (BFOM). The Ga2O3 based devices show robustness against chemical, thermal and radiation environments. Unfortunately, the current Ga2O3 technology is still not mature for commercial usage., Thus, extensive research on the growth of various polymorph of Ga2O3 materials has been carried out. This article aims to provide an overview of the current understanding of epitaxial growth of different phases of Ga2O3 by various growth techniques including pulsed laser deposition (PLD), molecular beam epitaxy (MBE), metal-organic chemical vapour deposition (MOCVD), sputtering, mist chemical vapour deposition (Mist CVD) and atomic layer deposition (ALD).The review also investigates the factors such as the growth temperature, pressure, carrier gas, III/V ratio, substrate as well as doping which would influence the synthesis and the stability of meta stable phases of Ga2O3. In addition, a through discussion of growth window is also provided using phase diagrams for aforementioned epitaxial deposition methods.
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Acoustics and Ultrasonics
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics