Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED

Tien Khee Ng; Chao Zhao; Chao Shen; Shafat Jahangir; Bilal Janjua; Ahmed Ben Slimane; Chun Hong Kang; Ahad A. Syed; Jingqi Li; Ahmed Y. Alyamani; Munir M. El-Desouki; Pallab Bhattacharya; Boon S. Ooi

Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED

Tien Khee Ng, Chao Zhao, Chao Shen, Shafat Jahangir, Bilal Janjua, Ahmed Ben Slimane, Chun Hong Kang, Ahad A. Syed, Jingqi Li, Ahmed Y. Alyamani, Munir M. El-Desouki, Pallab Bhattacharya, Boon S. Ooi

Research output: Contribution to conference › Paper › peer-review

5 Scopus citations

Abstract

The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ∼830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.

Original language	English (US)
State	Published - 2014
Event	2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States Duration: Jun 8 2014 → Jun 13 2014

Other

Other	2014 Conference on Lasers and Electro-Optics, CLEO 2014
Country/Territory	United States
City	San Jose
Period	06/8/14 → 06/13/14

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

Cite this

@conference{e06b71103d27465c9c5848cc6778a62c,

title = "Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED",

abstract = "The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ∼830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.",

author = "Ng, {Tien Khee} and Chao Zhao and Chao Shen and Shafat Jahangir and Bilal Janjua and Slimane, {Ahmed Ben} and Kang, {Chun Hong} and Syed, {Ahad A.} and Jingqi Li and Alyamani, {Ahmed Y.} and El-Desouki, {Munir M.} and Pallab Bhattacharya and Ooi, {Boon S.}",

note = "Publisher Copyright: {\textcopyright} 2014 Optical Society of America.; 2014 Conference on Lasers and Electro-Optics, CLEO 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

language = "English (US)",

}

TY - CONF

T1 - Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED

AU - Ng, Tien Khee

AU - Zhao, Chao

AU - Shen, Chao

AU - Jahangir, Shafat

AU - Janjua, Bilal

AU - Slimane, Ahmed Ben

AU - Kang, Chun Hong

AU - Syed, Ahad A.

AU - Li, Jingqi

AU - Alyamani, Ahmed Y.

AU - El-Desouki, Munir M.

AU - Bhattacharya, Pallab

AU - Ooi, Boon S.

PY - 2014

Y1 - 2014

N2 - The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ∼830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.

AB - The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ∼830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.

UR - http://www.scopus.com/inward/record.url?scp=84944707028&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:84944707028

T2 - 2014 Conference on Lasers and Electro-Optics, CLEO 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Red to near-infrared emission from InGaN/GaN quantum-disks-in-nanowires LED

Abstract

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ASJC Scopus subject areas

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