TY - JOUR
T1 - Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction
AU - Alhassan, Abdullah I.
AU - Young, Erin C.
AU - Alyamani, Ahmed Y.
AU - Albadri, Abdulrahman
AU - Nakamura, Shuji
AU - DenBaars, Steven P.
AU - Speck, James S.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. Additional support was provided by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was carried out in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
PY - 2018/3/1
Y1 - 2018/3/1
N2 - We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.
AB - We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.
UR - http://hdl.handle.net/10754/629750
UR - https://iopscience.iop.org/article/10.7567/APEX.11.042101
UR - http://www.scopus.com/inward/record.url?scp=85044958116&partnerID=8YFLogxK
U2 - 10.7567/apex.11.042101
DO - 10.7567/apex.11.042101
M3 - Article
SN - 1882-0778
VL - 11
SP - 042101
JO - Applied Physics Express
JF - Applied Physics Express
IS - 4
ER -