Abstract
Interlayer lithography is used to pattern highly conductive, solution-processed, reduced graphene oxide source and drain electrodes down to 10 μm gaps. These patterned electrodes allow for the fabrication of high-performance organic thin-film transistors and complementary circuits. The method offers a viable route towards organic electronics fabricated entirely by solution processing.
Original language | English (US) |
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Pages (from-to) | 1558-1562 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 23 |
Issue number | 13 |
DOIs | |
State | Published - Apr 5 2011 |
Externally published | Yes |
Keywords
- dielectrics
- graphene
- lithography
- organic semiconductors
- self-assembled monolayers
- transistors
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering