Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam

Seyedhamidreza Alaie; Mohammadhosein Ghasemi Baboly; Ying Bing Jiang; Susan B. Rempe; Dalaver H. Anjum; Saharoui Chaieb; Brian Francis Donovan; Ashutosh Giri; Chester J Szwejkowski; John Thomas Gaskins; Mirza Elahi; Drew Goettler; Jeffrey L. Braun; Patrick E. Hopkins; Zayd Chad Leseman

doi:10.1021/acsami.8b11949

Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam

Seyedhamidreza Alaie, Mohammadhosein Ghasemi Baboly, Ying Bing Jiang, Susan B. Rempe, Dalaver H. Anjum, Saharoui Chaieb, Brian Francis Donovan, Ashutosh Giri, Chester J Szwejkowski, John Thomas Gaskins, Mirza Elahi, Drew Goettler, Jeffrey L. Braun, Patrick E. Hopkins, Zayd Chad Leseman

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Focused Ion Beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however are not well understood, nor do experimental data exist. This paper presents a carefully designed set of experiments for the determination of the thermal conductivity of Si samples irradiated by Ga+ FIB. Generally, the thermal conductivity decreases with increasing ion dose. For doses of >1016 (Ga+/cm2), a reversal of the trend was observed due to recrystallization of Si. This report provides insight on the thermal transport considerations relevant to engineering of Si nanostructures and interfaces fabricated or prepared by FIB.

Original language	English (US)
Pages (from-to)	37679-37684
Number of pages	6
Journal	ACS Applied Materials & Interfaces
Volume	10
Issue number	43
DOIs	https://doi.org/10.1021/acsami.8b11949
State	Published - Oct 3 2018

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https://repository.kaust.edu.sa/bitstream/10754/628917/1/acsami.8b11949.pdf

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Alaie, S., Ghasemi Baboly, M., Jiang, Y. B., Rempe, S. B., Anjum, D. H., Chaieb, S., Donovan, B. F., Giri, A., Szwejkowski, C. J., Gaskins, J. T., Elahi, M., Goettler, D., Braun, J. L., Hopkins, P. E., & Leseman, Z. C. (2018). Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam. ACS Applied Materials & Interfaces, 10(43), 37679-37684. https://doi.org/10.1021/acsami.8b11949

@article{948ada68644a4025b6c53d8953a7f218,

title = "Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam",

abstract = "Focused Ion Beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however are not well understood, nor do experimental data exist. This paper presents a carefully designed set of experiments for the determination of the thermal conductivity of Si samples irradiated by Ga+ FIB. Generally, the thermal conductivity decreases with increasing ion dose. For doses of >1016 (Ga+/cm2), a reversal of the trend was observed due to recrystallization of Si. This report provides insight on the thermal transport considerations relevant to engineering of Si nanostructures and interfaces fabricated or prepared by FIB.",

author = "Seyedhamidreza Alaie and {Ghasemi Baboly}, Mohammadhosein and Jiang, {Ying Bing} and Rempe, {Susan B.} and Anjum, {Dalaver H.} and Saharoui Chaieb and Donovan, {Brian Francis} and Ashutosh Giri and Szwejkowski, {Chester J} and Gaskins, {John Thomas} and Mirza Elahi and Drew Goettler and Braun, {Jeffrey L.} and Hopkins, {Patrick E.} and Leseman, {Zayd Chad}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: SA, MGB, DFG and ZCL acknowledge support from the National Science Foundation Division of CMMI under Award 1056077. Materials supplied by PEH et al. are based upon work partially supported by the Air Force Office of Scientific Research under award number FA9550-18-1-0352. PEH is also appreciative for support from the National Science Foundation, Grant No. CBET-1706388.",

year = "2018",

month = oct,

day = "3",

doi = "10.1021/acsami.8b11949",

language = "English (US)",

volume = "10",

pages = "37679--37684",

journal = "ACS Applied Materials & Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "43",

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Alaie, S, Ghasemi Baboly, M, Jiang, YB, Rempe, SB, Anjum, DH, Chaieb, S, Donovan, BF, Giri, A, Szwejkowski, CJ, Gaskins, JT, Elahi, M, Goettler, D, Braun, JL, Hopkins, PE & Leseman, ZC 2018, 'Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam', ACS Applied Materials & Interfaces, vol. 10, no. 43, pp. 37679-37684. https://doi.org/10.1021/acsami.8b11949

TY - JOUR

T1 - Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam

AU - Alaie, Seyedhamidreza

AU - Ghasemi Baboly, Mohammadhosein

AU - Jiang, Ying Bing

AU - Rempe, Susan B.

AU - Anjum, Dalaver H.

AU - Chaieb, Saharoui

AU - Donovan, Brian Francis

AU - Giri, Ashutosh

AU - Szwejkowski, Chester J

AU - Gaskins, John Thomas

AU - Elahi, Mirza

AU - Goettler, Drew

AU - Braun, Jeffrey L.

AU - Hopkins, Patrick E.

AU - Leseman, Zayd Chad

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: SA, MGB, DFG and ZCL acknowledge support from the National Science Foundation Division of CMMI under Award 1056077. Materials supplied by PEH et al. are based upon work partially supported by the Air Force Office of Scientific Research under award number FA9550-18-1-0352. PEH is also appreciative for support from the National Science Foundation, Grant No. CBET-1706388.

PY - 2018/10/3

Y1 - 2018/10/3

N2 - Focused Ion Beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however are not well understood, nor do experimental data exist. This paper presents a carefully designed set of experiments for the determination of the thermal conductivity of Si samples irradiated by Ga+ FIB. Generally, the thermal conductivity decreases with increasing ion dose. For doses of >1016 (Ga+/cm2), a reversal of the trend was observed due to recrystallization of Si. This report provides insight on the thermal transport considerations relevant to engineering of Si nanostructures and interfaces fabricated or prepared by FIB.

AB - Focused Ion Beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however are not well understood, nor do experimental data exist. This paper presents a carefully designed set of experiments for the determination of the thermal conductivity of Si samples irradiated by Ga+ FIB. Generally, the thermal conductivity decreases with increasing ion dose. For doses of >1016 (Ga+/cm2), a reversal of the trend was observed due to recrystallization of Si. This report provides insight on the thermal transport considerations relevant to engineering of Si nanostructures and interfaces fabricated or prepared by FIB.

UR - http://hdl.handle.net/10754/628917

UR - https://pubs.acs.org/doi/10.1021/acsami.8b11949

UR - http://www.scopus.com/inward/record.url?scp=85055157189&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b11949

DO - 10.1021/acsami.8b11949

M3 - Article

SN - 1944-8244

VL - 10

SP - 37679

EP - 37684

JO - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

IS - 43

ER -

Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam

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