TY - JOUR
T1 - Reduction in defect density over whole area of (11̄00) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth
AU - Kawashima, T.
AU - Nagai, T.
AU - Iida, D.
AU - Miura, A.
AU - Okadome, Y.
AU - Tsuchiya, Y.
AU - Iwaya, M.
AU - Kamiyama, S.
AU - Amano, H.
AU - Akasaki, I.
N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21
PY - 2007/6/1
Y1 - 2007/6/1
N2 - We succeeded in growing low-defect-density w-plane GaN on grooved m-plane GaN with SiO2 masks on the terrace region. By changing the V/III ratio, we were able to increase the growth rate of GaN on one sidewall, thereby achieving one-sidedwall lateral growth. Dislocations and stacking faults were decreased markedly over the whole area. The densities of dislocations and stacking faults were 1.3 × 107 (cm-2) and
AB - We succeeded in growing low-defect-density w-plane GaN on grooved m-plane GaN with SiO2 masks on the terrace region. By changing the V/III ratio, we were able to increase the growth rate of GaN on one sidewall, thereby achieving one-sidedwall lateral growth. Dislocations and stacking faults were decreased markedly over the whole area. The densities of dislocations and stacking faults were 1.3 × 107 (cm-2) and
UR - https://onlinelibrary.wiley.com/doi/10.1002/pssb.200674805
UR - http://www.scopus.com/inward/record.url?scp=34250322723&partnerID=8YFLogxK
U2 - 10.1002/pssb.200674805
DO - 10.1002/pssb.200674805
M3 - Article
SN - 0370-1972
VL - 244
SP - 1848
EP - 1852
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
IS - 6
ER -