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Reduction in defect density over whole area of (11̄00) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth
T. Kawashima, T. Nagai, D. Iida, A. Miura, Y. Okadome, Y. Tsuchiya, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
Research output: Contribution to journal › Article › peer-review
38
Scopus
citations