Reduction of local mechanical stress in a transistor using Si ₃N₄/SiO_xN_y, contact ESL

Engineering

• Buffer Layer 50%
• Channel Transistor 50%
• Complementary Metal-Oxide-Semiconductor 50%
• Complementary Metal-Oxide-Semiconductor Device 50%
• Convergent Beam Electron Diffraction 50%
• Current Drive 50%
• Electrical Performance 50%
• Mechanical Stress 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Nanoscale 50%
• Strain 50%

Material Science

• Buffer Layer 50%
• Complementary Metal-Oxide-Semiconductor Device 100%
• Convergent Beam Electron Diffraction 50%
• Electron Mobility 50%
• Film 50%
• Mechanical Stress 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Silicon Nitride 50%
• Transistor 100%

Keyphrases

• Complementary Metal Oxide Semiconductor Field Effect Transistor 25%
• Contact Etch Stop Layer 100%
• Deep Submicron 25%