Repair Engineering of Crystal Structure in van der Waals Materials by Probe Electron Beam

Nan Wang; Shiyang Wei; Xia Deng; Tao Wang; Yaxing Zhang; Xinrui Zhao; Wang Hu; Xue Zeng; Chuang Ye; Xiaoke Mu; Junwei Zhang; Laiyuan Wang; Xixiang Zhang; Zhe Wang; Peng Zhang; Yong Peng

doi:10.1021/acs.nanolett.4c03119

Repair Engineering of Crystal Structure in van der Waals Materials by Probe Electron Beam

Nan Wang, Shiyang Wei, Xia Deng, Tao Wang, Yaxing Zhang, Xinrui Zhao, Wang Hu, Xue Zeng, Chuang Ye, Xiaoke Mu, Junwei Zhang^*, Laiyuan Wang^*, Xixiang Zhang, Zhe Wang, Peng Zhang, Yong Peng^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The advancement of electronic technology has led to increasing research on performance and stability. Continuous electrical pulse stimulation can cause crystal structure changes, affecting performance and accelerating aging. Controlled repair of these defects is crucial. In this study, we investigated crystal structure changes in van der Waals (vdW) InSe crystals under continuous electric pulses by using electron beam lithography (EBL) and spherical aberration corrected transmission electron microscopy (Cs-TEM). Results show that electrical pulses induce amorphous regions in the InSe lattice, increasing the device resistance. We used Cs-STEM probe scanning for precise repair, abbreviated SPRT, to optimize device performance. SPRT is related to electric fields induced by the electron beam and can be applied to other 2D materials like α-In₂Se₃ and CrSe₂, offering a potential approach to extend device lifespan.

Original language	English (US)
Journal	Nano Letters
DOIs	https://doi.org/10.1021/acs.nanolett.4c03119
State	Accepted/In press - 2024

Keywords

defects
electrical pulses
probe electron beam
repair engineering
van der Waals layered materials

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/acs.nanolett.4c03119

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@article{117b1fe98e79402fbb3244e9a48091d1,

title = "Repair Engineering of Crystal Structure in van der Waals Materials by Probe Electron Beam",

abstract = "The advancement of electronic technology has led to increasing research on performance and stability. Continuous electrical pulse stimulation can cause crystal structure changes, affecting performance and accelerating aging. Controlled repair of these defects is crucial. In this study, we investigated crystal structure changes in van der Waals (vdW) InSe crystals under continuous electric pulses by using electron beam lithography (EBL) and spherical aberration corrected transmission electron microscopy (Cs-TEM). Results show that electrical pulses induce amorphous regions in the InSe lattice, increasing the device resistance. We used Cs-STEM probe scanning for precise repair, abbreviated SPRT, to optimize device performance. SPRT is related to electric fields induced by the electron beam and can be applied to other 2D materials like α-In2Se3 and CrSe2, offering a potential approach to extend device lifespan.",

keywords = "defects, electrical pulses, probe electron beam, repair engineering, van der Waals layered materials",

author = "Nan Wang and Shiyang Wei and Xia Deng and Tao Wang and Yaxing Zhang and Xinrui Zhao and Wang Hu and Xue Zeng and Chuang Ye and Xiaoke Mu and Junwei Zhang and Laiyuan Wang and Xixiang Zhang and Zhe Wang and Peng Zhang and Yong Peng",

note = "Publisher Copyright: {\textcopyright} 2024 American Chemical Society.",

year = "2024",

doi = "10.1021/acs.nanolett.4c03119",

language = "English (US)",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

}

TY - JOUR

T1 - Repair Engineering of Crystal Structure in van der Waals Materials by Probe Electron Beam

AU - Wang, Nan

AU - Wei, Shiyang

AU - Deng, Xia

AU - Wang, Tao

AU - Zhang, Yaxing

AU - Zhao, Xinrui

AU - Hu, Wang

AU - Zeng, Xue

AU - Ye, Chuang

AU - Mu, Xiaoke

AU - Zhang, Junwei

AU - Wang, Laiyuan

AU - Zhang, Xixiang

AU - Wang, Zhe

AU - Zhang, Peng

AU - Peng, Yong

PY - 2024

Y1 - 2024

N2 - The advancement of electronic technology has led to increasing research on performance and stability. Continuous electrical pulse stimulation can cause crystal structure changes, affecting performance and accelerating aging. Controlled repair of these defects is crucial. In this study, we investigated crystal structure changes in van der Waals (vdW) InSe crystals under continuous electric pulses by using electron beam lithography (EBL) and spherical aberration corrected transmission electron microscopy (Cs-TEM). Results show that electrical pulses induce amorphous regions in the InSe lattice, increasing the device resistance. We used Cs-STEM probe scanning for precise repair, abbreviated SPRT, to optimize device performance. SPRT is related to electric fields induced by the electron beam and can be applied to other 2D materials like α-In2Se3 and CrSe2, offering a potential approach to extend device lifespan.

AB - The advancement of electronic technology has led to increasing research on performance and stability. Continuous electrical pulse stimulation can cause crystal structure changes, affecting performance and accelerating aging. Controlled repair of these defects is crucial. In this study, we investigated crystal structure changes in van der Waals (vdW) InSe crystals under continuous electric pulses by using electron beam lithography (EBL) and spherical aberration corrected transmission electron microscopy (Cs-TEM). Results show that electrical pulses induce amorphous regions in the InSe lattice, increasing the device resistance. We used Cs-STEM probe scanning for precise repair, abbreviated SPRT, to optimize device performance. SPRT is related to electric fields induced by the electron beam and can be applied to other 2D materials like α-In2Se3 and CrSe2, offering a potential approach to extend device lifespan.

KW - defects

KW - electrical pulses

KW - probe electron beam

KW - repair engineering

KW - van der Waals layered materials

UR - http://www.scopus.com/inward/record.url?scp=85202186281&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.4c03119

DO - 10.1021/acs.nanolett.4c03119

M3 - Article

C2 - 39186253

AN - SCOPUS:85202186281

SN - 1530-6984

JO - Nano Letters

JF - Nano Letters

ER -

Repair Engineering of Crystal Structure in van der Waals Materials by Probe Electron Beam

Abstract

Keywords

ASJC Scopus subject areas

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