Requirements of PECVD SiNx:H layers for bulk passivation of mc-Si

H. F.W. Dekkers*, S. De Wolf, G. Agostinelli, F. Duerinckx, G. Beaucarne

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


Optimization of plasma enhanced chemical vapor deposited hydrogenated silicon nitride (SiNx:H) towards bulk passivation of multi-crystalline silicon cells has been carried out for both low and high frequency (HF) plasma deposition. Experimental results showed that bulk passivation is not caused by hydrogen incorporation in the top silicon layer during deposition and subsequent diffusion towards the bulk during firing, but that it is released from the SiNx:H film. We demonstrate that the amount of passivation depends on the SiNx:H density and its resistance against etching in HF. Optimization of the density, varying deposition temperature and using hydrogen dilution resulted in an optimized passivation.

Original languageEnglish (US)
Pages (from-to)3244-3250
Number of pages7
JournalSolar Energy Materials and Solar Cells
Issue number18-19
StatePublished - Nov 23 2006
Externally publishedYes


  • Multi-crystalline
  • Passivation
  • Silicon nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films


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