Requirements of PECVD SiNx:H layers for bulk passivation of mc-Si

H. F.W. Dekkers; S. De Wolf; G. Agostinelli; F. Duerinckx; G. Beaucarne

doi:10.1016/j.solmat.2006.06.024

Requirements of PECVD SiN_x:H layers for bulk passivation of mc-Si

H. F.W. Dekkers^*, S. De Wolf, G. Agostinelli, F. Duerinckx, G. Beaucarne

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

Optimization of plasma enhanced chemical vapor deposited hydrogenated silicon nitride (SiN_x:H) towards bulk passivation of multi-crystalline silicon cells has been carried out for both low and high frequency (HF) plasma deposition. Experimental results showed that bulk passivation is not caused by hydrogen incorporation in the top silicon layer during deposition and subsequent diffusion towards the bulk during firing, but that it is released from the SiN_x:H film. We demonstrate that the amount of passivation depends on the SiN_x:H density and its resistance against etching in HF. Optimization of the density, varying deposition temperature and using hydrogen dilution resulted in an optimized passivation.

Original language	English (US)
Pages (from-to)	3244-3250
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	90
Issue number	18-19
DOIs	https://doi.org/10.1016/j.solmat.2006.06.024
State	Published - Nov 23 2006
Externally published	Yes

Keywords

Multi-crystalline
Passivation
Silicon nitride

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solmat.2006.06.024

Cite this

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title = "Requirements of PECVD SiNx:H layers for bulk passivation of mc-Si",

abstract = "Optimization of plasma enhanced chemical vapor deposited hydrogenated silicon nitride (SiNx:H) towards bulk passivation of multi-crystalline silicon cells has been carried out for both low and high frequency (HF) plasma deposition. Experimental results showed that bulk passivation is not caused by hydrogen incorporation in the top silicon layer during deposition and subsequent diffusion towards the bulk during firing, but that it is released from the SiNx:H film. We demonstrate that the amount of passivation depends on the SiNx:H density and its resistance against etching in HF. Optimization of the density, varying deposition temperature and using hydrogen dilution resulted in an optimized passivation.",

keywords = "Multi-crystalline, Passivation, Silicon nitride",

author = "Dekkers, {H. F.W.} and {De Wolf}, S. and G. Agostinelli and F. Duerinckx and G. Beaucarne",

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T1 - Requirements of PECVD SiNx:H layers for bulk passivation of mc-Si

AU - Dekkers, H. F.W.

AU - De Wolf, S.

AU - Agostinelli, G.

AU - Duerinckx, F.

AU - Beaucarne, G.

PY - 2006/11/23

Y1 - 2006/11/23

N2 - Optimization of plasma enhanced chemical vapor deposited hydrogenated silicon nitride (SiNx:H) towards bulk passivation of multi-crystalline silicon cells has been carried out for both low and high frequency (HF) plasma deposition. Experimental results showed that bulk passivation is not caused by hydrogen incorporation in the top silicon layer during deposition and subsequent diffusion towards the bulk during firing, but that it is released from the SiNx:H film. We demonstrate that the amount of passivation depends on the SiNx:H density and its resistance against etching in HF. Optimization of the density, varying deposition temperature and using hydrogen dilution resulted in an optimized passivation.

AB - Optimization of plasma enhanced chemical vapor deposited hydrogenated silicon nitride (SiNx:H) towards bulk passivation of multi-crystalline silicon cells has been carried out for both low and high frequency (HF) plasma deposition. Experimental results showed that bulk passivation is not caused by hydrogen incorporation in the top silicon layer during deposition and subsequent diffusion towards the bulk during firing, but that it is released from the SiNx:H film. We demonstrate that the amount of passivation depends on the SiNx:H density and its resistance against etching in HF. Optimization of the density, varying deposition temperature and using hydrogen dilution resulted in an optimized passivation.

KW - Multi-crystalline

KW - Passivation

KW - Silicon nitride

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DO - 10.1016/j.solmat.2006.06.024

M3 - Article

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