Resistive Switching Crossbar Arrays Based on Layered Materials

Mario Lanza, Fei Hui, Chao Wen, Andrea C. Ferrari

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Resistive switching (RS) devices are metal/insulator/metal (MIM) cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices/mm2) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices (compared to traditional phase-change materials and metal-oxides) is that their electrical properties can be adjusted with a higher precision. Here we define the key figures-of-merit and procedures to implement LM-based RS devices. We identify and discuss LM-based RS devices fabricated using methods compatible with industry. We focus on small devices (size
Original languageEnglish (US)
Pages (from-to)2205402
JournalAdvanced Materials
StatePublished - Sep 12 2022

ASJC Scopus subject areas

  • Mechanics of Materials
  • General Materials Science
  • Mechanical Engineering


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