Abstract
We report on a large improvement of the thermal stability and mechanical properties of amorphous boron-nitride upon carbon doping. By generating versatile force fields using first-principles and machine learning simulations, we investigate the structural properties of amorphous boron-nitride with varying contents of carbon (from a few percent to 40 at%). We found that for 20 at% of carbon, the sp3/sp2 ratio reaches a maximum with a negligible graphitisation effect, resulting in an improvement of the thermal stability by up to 20% while the bulk Young's modulus increases by about 30%. These results provide a guide to experimentalists and engineers to further tailor the growth conditions of BN-based compounds as non-conductive diffusion barriers and ultralow dielectric coefficient materials for a number of applications including interconnect technology.
Original language | English (US) |
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Journal | Nanoscale Horizons |
DOIs | |
State | Published - Dec 20 2022 |
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Gaussian Approximation Potential for C-doped Boron Nitride
Kaya, O. (Creator), Colombo, L. (Creator), Antidormi, A. (Creator), Lanza, M. (Creator) & Roche, S. (Creator), Zenodo, Jan 3 2023
DOI: 10.5281/zenodo.7500738, http://hdl.handle.net/10754/687289
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