Reverse-bias resilience of monolithic perovskite/silicon tandem solar cells

Zhaojian Xu, Helen Laura Bristow, Maxime Babics, Badri Vishal, Erkan Aydin, Randi Azmi, Esma Ugur, Bumin Kağan Yıldırım, Jiang Liu, Ross A. Kerner, Stefaan De Wolf, Barry P. Rand

Research output: Contribution to journalArticlepeer-review

Abstract

Metal halide perovskites have rapidly enabled a range of high-performance photovoltaic technologies. However, catastrophic failure under reverse voltage bias poses a roadblock for their commercialization. In this work, we conduct a series of stress tests to compare the reverse-bias stability of perovskite single-junction, silicon single-junction, and monolithic perovskite/silicon tandem solar cells. We demonstrate that the tested perovskite/silicon tandem devices are considerably more resilient against reverse bias compared with perovskite single-junction devices. The origin of such improved stability stems from the low reverse-bias diode current of the silicon subcell. This translates to dropping most of the voltage over the silicon subcell, where such a favorable voltage distribution protects the perovskite subcell from reverse-bias-induced degradation. These results highlight that, compared with other perovskite technologies, monolithic perovskite/silicon tandems are at a higher technology readiness level in terms of tackling the reverse bias and partial shading challenges, which is a considerable advantage toward commercialization.
Original languageEnglish (US)
JournalJoule
DOIs
StatePublished - Sep 5 2023

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