Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages

J. B. Roldan; D. Maldonado; F. Jimenez-Molinos; C. Acal; J. E. Ruiz-Castro; A. M. Aguilera; F. Hui; J. Kong; Y. Shi; X. Jing; C. Wen; M. A. Villena; M. Lanza

doi:10.1109/IRPS45951.2020.9129147

Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages

J. B. Roldan, D. Maldonado, F. Jimenez-Molinos, C. Acal, J. E. Ruiz-Castro, A. M. Aguilera, F. Hui, J. Kong, Y. Shi, X. Jing, C. Wen, M. A. Villena, M. Lanza

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Memristor devices with the Au/Ag/h-BN/Fe structure have been fabricated and characterized. The switching voltages, and other newly-defined parameters extracted, like V2dmax1 and V2dmax2, have been analyzed statistically in an exhaustive manner. The conduction across the memristor can be described well with a Quantum Point Contact (QPC) model that accounts for quantized filamentary conduction. The distributions of set and reset voltages have been proved to be accurately reproduced by using Weibull distributions. We also present an analysis making use of phase-type distributions to characterize the measured data stochasticity.

Original language	English (US)
Title of host publication	IEEE International Reliability Physics Symposium Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781728131993
DOIs	https://doi.org/10.1109/IRPS45951.2020.9129147
State	Published - Apr 1 2020
Externally published	Yes

Access to Document

10.1109/IRPS45951.2020.9129147

Cite this

Roldan, J. B., Maldonado, D., Jimenez-Molinos, F., Acal, C., Ruiz-Castro, J. E., Aguilera, A. M., Hui, F., Kong, J., Shi, Y., Jing, X., Wen, C., Villena, M. A., & Lanza, M. (2020). Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages. In IEEE International Reliability Physics Symposium Proceedings Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS45951.2020.9129147

@inproceedings{f7d0ad4759854825998cf72b63749fbf,

title = "Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages",

abstract = "Memristor devices with the Au/Ag/h-BN/Fe structure have been fabricated and characterized. The switching voltages, and other newly-defined parameters extracted, like V2dmax1 and V2dmax2, have been analyzed statistically in an exhaustive manner. The conduction across the memristor can be described well with a Quantum Point Contact (QPC) model that accounts for quantized filamentary conduction. The distributions of set and reset voltages have been proved to be accurately reproduced by using Weibull distributions. We also present an analysis making use of phase-type distributions to characterize the measured data stochasticity.",

author = "Roldan, {J. B.} and D. Maldonado and F. Jimenez-Molinos and C. Acal and Ruiz-Castro, {J. E.} and Aguilera, {A. M.} and F. Hui and J. Kong and Y. Shi and X. Jing and C. Wen and Villena, {M. A.} and M. Lanza",

note = "Generated from Scopus record by KAUST IRTS on 2021-03-16",

year = "2020",

month = apr,

day = "1",

doi = "10.1109/IRPS45951.2020.9129147",

language = "English (US)",

isbn = "9781728131993",

booktitle = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

}

Roldan, JB, Maldonado, D, Jimenez-Molinos, F, Acal, C, Ruiz-Castro, JE, Aguilera, AM, Hui, F, Kong, J, Shi, Y, Jing, X, Wen, C, Villena, MA & Lanza, M 2020, Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages. in IEEE International Reliability Physics Symposium Proceedings. Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/IRPS45951.2020.9129147

TY - GEN

T1 - Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages

AU - Roldan, J. B.

AU - Maldonado, D.

AU - Jimenez-Molinos, F.

AU - Acal, C.

AU - Ruiz-Castro, J. E.

AU - Aguilera, A. M.

AU - Hui, F.

AU - Kong, J.

AU - Shi, Y.

AU - Jing, X.

AU - Wen, C.

AU - Villena, M. A.

AU - Lanza, M.

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2020/4/1

Y1 - 2020/4/1

N2 - Memristor devices with the Au/Ag/h-BN/Fe structure have been fabricated and characterized. The switching voltages, and other newly-defined parameters extracted, like V2dmax1 and V2dmax2, have been analyzed statistically in an exhaustive manner. The conduction across the memristor can be described well with a Quantum Point Contact (QPC) model that accounts for quantized filamentary conduction. The distributions of set and reset voltages have been proved to be accurately reproduced by using Weibull distributions. We also present an analysis making use of phase-type distributions to characterize the measured data stochasticity.

AB - Memristor devices with the Au/Ag/h-BN/Fe structure have been fabricated and characterized. The switching voltages, and other newly-defined parameters extracted, like V2dmax1 and V2dmax2, have been analyzed statistically in an exhaustive manner. The conduction across the memristor can be described well with a Quantum Point Contact (QPC) model that accounts for quantized filamentary conduction. The distributions of set and reset voltages have been proved to be accurately reproduced by using Weibull distributions. We also present an analysis making use of phase-type distributions to characterize the measured data stochasticity.

UR - https://ieeexplore.ieee.org/document/9129147/

UR - http://www.scopus.com/inward/record.url?scp=85088371371&partnerID=8YFLogxK

U2 - 10.1109/IRPS45951.2020.9129147

DO - 10.1109/IRPS45951.2020.9129147

M3 - Conference contribution

SN - 9781728131993

BT - IEEE International Reliability Physics Symposium Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages

Abstract

Access to Document

Other files and links

Fingerprint

Cite this