TY - JOUR
T1 - RF MEMS Fractal Capacitors With High Self-Resonant Frequencies
AU - Elshurafa, Amro M.
AU - Emira, Ahmed
AU - Radwan, Ahmed Gomaa
AU - Salama, Khaled N.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2011/12/5
Y1 - 2011/12/5
N2 - This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality factors higher than 4 throughout a band of 1-15 GHz and reaching as high as 28 were achieved. Additional benefits that are readily attainable from implementing fractal capacitors in MEMS are discussed, including suppressing residual stress warping, eliminating the need for etching holes, and reducing parasitics. The latter benefits were acquired without any fabrication intervention. © 2011 IEEE.
AB - This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality factors higher than 4 throughout a band of 1-15 GHz and reaching as high as 28 were achieved. Additional benefits that are readily attainable from implementing fractal capacitors in MEMS are discussed, including suppressing residual stress warping, eliminating the need for etching holes, and reducing parasitics. The latter benefits were acquired without any fabrication intervention. © 2011 IEEE.
UR - http://hdl.handle.net/10754/235131
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6095305
UR - http://www.scopus.com/inward/record.url?scp=84858445562&partnerID=8YFLogxK
U2 - 10.1109/JMEMS.2011.2175367
DO - 10.1109/JMEMS.2011.2175367
M3 - Article
SN - 1057-7157
VL - 21
SP - 10
EP - 12
JO - Journal of Microelectromechanical Systems
JF - Journal of Microelectromechanical Systems
IS - 1
ER -