TY - GEN
T1 - RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters
AU - Kumar, Ajay
AU - Gupta, Neha
AU - Goyal, Amit K.
AU - Massoud, Yehia Mahmoud
N1 - KAUST Repository Item: Exported on 2022-12-26
Acknowledgements: This work is supported by Institute Research and Development Project Scheme (IRDPS), Project ID: RD ECE-02 to A. Kumar. We are are thankful to JIIT for providing the support under Institute Research and Development Project Scheme (IRDPS), Project ID: RD ECE-02.
PY - 2022/7/18
Y1 - 2022/7/18
N2 - In this work, we have presented, a radio frequency (RF) assessment of nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device have been compared with conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains have significantly improved in terms of Gma, Gms, stern stability factor (SS), GMT, and intrinsic delay in comparison to conventional FinFET. Current gain unilateral power gain and have also been evaluated for the extraction of fT (cut-off frequency) and fMAX respectively. fT and fMAX enhance by 88.8% and 94.6% respectively. This analysis has been done at several THz frequencies. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.
AB - In this work, we have presented, a radio frequency (RF) assessment of nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device have been compared with conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains have significantly improved in terms of Gma, Gms, stern stability factor (SS), GMT, and intrinsic delay in comparison to conventional FinFET. Current gain unilateral power gain and have also been evaluated for the extraction of fT (cut-off frequency) and fMAX respectively. fT and fMAX enhance by 88.8% and 94.6% respectively. This analysis has been done at several THz frequencies. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.
UR - http://hdl.handle.net/10754/679935
UR - https://ieeexplore.ieee.org/document/9828977/
UR - http://www.scopus.com/inward/record.url?scp=85135876835&partnerID=8YFLogxK
U2 - 10.1109/5NANO53044.2022.9828977
DO - 10.1109/5NANO53044.2022.9828977
M3 - Conference contribution
SN - 978-1-6654-3729-5
BT - 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)
PB - IEEE
ER -