RGB monolithic GaInN-based μLED arrays connected via tunnel junctions

Tatsunari Saito; Naoki Hasegawa; Keigo Imura; Yoshinobu Suehiro; Tetsuya Takeuchi; Satoshi KAMIYAMA; Daisuke Iida; Kazuhiro Ohkawa; Motoaki Iwaya

doi:10.35848/1882-0786/aced7c

RGB monolithic GaInN-based μLED arrays connected via tunnel junctions

Tatsunari Saito, Naoki Hasegawa, Keigo Imura, Yoshinobu Suehiro, Tetsuya Takeuchi, Satoshi KAMIYAMA, Daisuke Iida, Kazuhiro Ohkawa, Motoaki Iwaya

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report a 330 ppi monolithic RGB μLED (ultra-compact light-emitting diode) array of blue, green and red GaInN-based LEDs stacked on the same wafer. Considering it is challenging to form ohmic electrodes on the plasma-etched p-type GaN surface, GaInN-based tunnel junctions were used to connect each LED, and anode electrodes for the blue and green LEDs were formed on n-type GaN. The fabricated stacked monolithic μLED arrays were tested at room temperature (approximately 26°C) and DC. Each μLED emitted blue, green and red with peak wavelengths of 486, 514 and 604 nm at a current density of 50 A/cm2.

Original language	English (US)
Journal	APPLIED PHYSICS EXPRESS
DOIs	https://doi.org/10.35848/1882-0786/aced7c
State	Published - Aug 4 2023

ASJC Scopus subject areas

General Physics and Astronomy
General Engineering

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https://repository.kaust.edu.sa/bitstream/10754/693464/1/Saito%2bet%2bal_2023_Appl._Phys._Express_10.35848_1882-0786_aced7c_removed.pdf

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@article{b9d662806bad4924a3c71b954848a73e,

title = "RGB monolithic GaInN-based μLED arrays connected via tunnel junctions",

abstract = "We report a 330 ppi monolithic RGB μLED (ultra-compact light-emitting diode) array of blue, green and red GaInN-based LEDs stacked on the same wafer. Considering it is challenging to form ohmic electrodes on the plasma-etched p-type GaN surface, GaInN-based tunnel junctions were used to connect each LED, and anode electrodes for the blue and green LEDs were formed on n-type GaN. The fabricated stacked monolithic μLED arrays were tested at room temperature (approximately 26°C) and DC. Each μLED emitted blue, green and red with peak wavelengths of 486, 514 and 604 nm at a current density of 50 A/cm2.",

author = "Tatsunari Saito and Naoki Hasegawa and Keigo Imura and Yoshinobu Suehiro and Tetsuya Takeuchi and Satoshi KAMIYAMA and Daisuke Iida and Kazuhiro Ohkawa and Motoaki Iwaya",

note = "KAUST Repository Item: Exported on 2023-08-07 Acknowledged KAUST grant number(s): ORA-2022-5313, BAS/1/1676- 01-01 Acknowledgements: This study was partially supported by JSPS KAKENHI (22H00304), NEDO Feasibility Study Programme, JST A-STEP Project (JPMJTR201D) and King Abdullah University of Science and Technology (KAUST) Research Funding (KRF) (Award Nos. ORA-2022-5313 and BAS/1/1676- 01-01).",

year = "2023",

month = aug,

day = "4",

doi = "10.35848/1882-0786/aced7c",

language = "English (US)",

journal = "APPLIED PHYSICS EXPRESS",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

}

TY - JOUR

T1 - RGB monolithic GaInN-based μLED arrays connected via tunnel junctions

AU - Saito, Tatsunari

AU - Hasegawa, Naoki

AU - Imura, Keigo

AU - Suehiro, Yoshinobu

AU - Takeuchi, Tetsuya

AU - KAMIYAMA, Satoshi

AU - Iida, Daisuke

AU - Ohkawa, Kazuhiro

AU - Iwaya, Motoaki

N1 - KAUST Repository Item: Exported on 2023-08-07 Acknowledged KAUST grant number(s): ORA-2022-5313, BAS/1/1676- 01-01 Acknowledgements: This study was partially supported by JSPS KAKENHI (22H00304), NEDO Feasibility Study Programme, JST A-STEP Project (JPMJTR201D) and King Abdullah University of Science and Technology (KAUST) Research Funding (KRF) (Award Nos. ORA-2022-5313 and BAS/1/1676- 01-01).

PY - 2023/8/4

Y1 - 2023/8/4

N2 - We report a 330 ppi monolithic RGB μLED (ultra-compact light-emitting diode) array of blue, green and red GaInN-based LEDs stacked on the same wafer. Considering it is challenging to form ohmic electrodes on the plasma-etched p-type GaN surface, GaInN-based tunnel junctions were used to connect each LED, and anode electrodes for the blue and green LEDs were formed on n-type GaN. The fabricated stacked monolithic μLED arrays were tested at room temperature (approximately 26°C) and DC. Each μLED emitted blue, green and red with peak wavelengths of 486, 514 and 604 nm at a current density of 50 A/cm2.

AB - We report a 330 ppi monolithic RGB μLED (ultra-compact light-emitting diode) array of blue, green and red GaInN-based LEDs stacked on the same wafer. Considering it is challenging to form ohmic electrodes on the plasma-etched p-type GaN surface, GaInN-based tunnel junctions were used to connect each LED, and anode electrodes for the blue and green LEDs were formed on n-type GaN. The fabricated stacked monolithic μLED arrays were tested at room temperature (approximately 26°C) and DC. Each μLED emitted blue, green and red with peak wavelengths of 486, 514 and 604 nm at a current density of 50 A/cm2.

UR - http://hdl.handle.net/10754/693464

UR - https://iopscience.iop.org/article/10.35848/1882-0786/aced7c

U2 - 10.35848/1882-0786/aced7c

DO - 10.35848/1882-0786/aced7c

M3 - Article

SN - 1882-0778

JO - APPLIED PHYSICS EXPRESS

JF - APPLIED PHYSICS EXPRESS

ER -

RGB monolithic GaInN-based μLED arrays connected via tunnel junctions

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