TY - JOUR
T1 - Role of band states and trap states in the electrical properties of organic semiconductors
T2 - Hopping versus mobility edge model
AU - Mehraeen, Shafigh
AU - Coropceanu, Veaceslav
AU - Bredas, Jean-Luc
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): KUS-C1-015-21
Acknowledgements: We thank Antoine Kahn and Selina Olthof for many fruitful discussions. This work has been supported by the King Abdullah University of Science and Technology (KAUST), Award No. KUS-C1-015-21, in the framework of the Center for Advanced Molecular Photovoltaics (CAMP). Computational resources have been provided by the CRIF Program of the National Science Foundation under Award CHE-0946869.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
PY - 2013/5/28
Y1 - 2013/5/28
N2 - We compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors. We consider the case of a composite electronic density of states (DOS) that consists of a superposition of a Gaussian DOS and an exponential DOS. Using kinetic Monte Carlo simulations, we apply the two models in order to interpret the recent experimental data reported for n-doped C60 films. While both models are capable of reproducing the experimental data very well and yield qualitatively similar characteristic parameters for the density of states, some discrepancies are found at the quantitative level.
AB - We compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors. We consider the case of a composite electronic density of states (DOS) that consists of a superposition of a Gaussian DOS and an exponential DOS. Using kinetic Monte Carlo simulations, we apply the two models in order to interpret the recent experimental data reported for n-doped C60 films. While both models are capable of reproducing the experimental data very well and yield qualitatively similar characteristic parameters for the density of states, some discrepancies are found at the quantitative level.
UR - http://www.scopus.com/inward/record.url?scp=84878544828&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.87.195209
DO - 10.1103/PhysRevB.87.195209
M3 - Article
AN - SCOPUS:84878544828
SN - 1098-0121
VL - 87
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 19
M1 - 195209
ER -