TY - JOUR
T1 - Role of Dopants in Organic and Halide Perovskite Energy Conversion Devices
AU - Haque, Mohammed
AU - Rosas Villalva, Diego
AU - Hernandez, Luis Huerta
AU - Tounesi, Roba
AU - Jang, Soyeong
AU - Baran, Derya
N1 - KAUST Repository Item: Exported on 2021-10-26
Acknowledged KAUST grant number(s): OSR-CRG2018-3737
Acknowledgements: This publication is supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-CRG2018-3737.
PY - 2021/10/19
Y1 - 2021/10/19
N2 - Doping serves as a vital strategy for tuning electronic and optoelectronic properties of semiconductors. Compared to organic semiconductors, the understanding and optimization of the doping process in halide perovskite semiconductors is still in its infancy. Nonetheless, there is a continuous surge in doping these semiconductors for performance enhancement. This perspective discusses the central role of dopants in organic and halide perovskite-based semiconductors used for energy conversion devices, particularly solar cells and thermoelectrics. We summarize various p- and n-type dopants explored for modifying the active layer in organic and perovskite devices, highlighting their challenges and limitations. Understanding doping-induced changes in electronic properties and their ramifications on device performance is essential for improving the device performance.
AB - Doping serves as a vital strategy for tuning electronic and optoelectronic properties of semiconductors. Compared to organic semiconductors, the understanding and optimization of the doping process in halide perovskite semiconductors is still in its infancy. Nonetheless, there is a continuous surge in doping these semiconductors for performance enhancement. This perspective discusses the central role of dopants in organic and halide perovskite-based semiconductors used for energy conversion devices, particularly solar cells and thermoelectrics. We summarize various p- and n-type dopants explored for modifying the active layer in organic and perovskite devices, highlighting their challenges and limitations. Understanding doping-induced changes in electronic properties and their ramifications on device performance is essential for improving the device performance.
UR - http://hdl.handle.net/10754/672950
UR - https://pubs.acs.org/doi/10.1021/acs.chemmater.1c01867
U2 - 10.1021/acs.chemmater.1c01867
DO - 10.1021/acs.chemmater.1c01867
M3 - Article
SN - 0897-4756
JO - Chemistry of Materials
JF - Chemistry of Materials
ER -