Role of hydrogen bonding environment in a-Si:H films for c-Si surface passivation

Engineering

• Crystalline Silicon 100%
• Silicon Surface 100%
• Surface Passivation 100%
• Silicon Substrate 20%
• Nanometre 20%
• Low-Temperature 20%
• Passivation Layer 20%
• Deposition Temperature 20%
• Photovoltaics 20%
• Effective Lifetime 20%
• Lifetime Measurement 20%
• Film Surface 20%
• Si Interface 20%
• Heterojunctions 20%
• Carrier Lifetime 20%
• Dilution 20%
• Surface Defect 20%
• Defect Density 20%

Material Science

• Surface Passivation 100%
• Crystalline Material 100%
• Film 40%
• Photovoltaics 20%
• Epitaxy 20%
• Annealing 20%
• Heterojunction 20%
• Defect Density 20%
• Surface Defect 20%
• Amorphous Silicon 20%
• Carrier Lifetime 20%
• Dilution 20%

Keyphrases

• Silicon Surface Passivation 100%
• Effective Carrier Lifetime 25%
• Effective Lifetime 25%
• Passivation Quality 25%
• Si-H Bonds 25%
• Lifetime Measurement 25%
• Low-temperature Annealing 25%