Role of optical gain broadening in the broadband semiconductor quantum-dot laser

The authors present a theoretical model and analysis to gain a further insight of the broadband InGaAsGaAs quantum-dot laser characteristics. A detailed analysis of the role of both inhomogeneous and homogeneous optical gain broadenings on the broad lasing emission is incorporated in the theoretical model and compared with the experimental results. The experimental data of broadband laser signature agrees well with theoretical calculation confirming that the broadband stimulated emission from the laser at room temperature is a result of the occurrence of bistate lasing in highly inhomogeneous dots.