Role of oxygen vacancies in the high-temperature thermopower of indium oxide and indium tin oxide films

S. R. Sarath Kumar; S. Kasiviswanathan

doi:10.1088/0268-1242/24/2/025028

Role of oxygen vacancies in the high-temperature thermopower of indium oxide and indium tin oxide films

S. R. Sarath Kumar, S. Kasiviswanathan^*

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Thermopower measurements in a range of 300-650 K along with room temperature optical absorption and electrical resistivity studies were performed on indium oxide (IO) and indium tin oxide (ITO) thin films grown by reactive dc sputtering. The thermopower of as-grown and oxygen-annealed IO and ITO films measured in Ar ambient displayed characteristics attributable to oxygen loss. The observations were substantiated with optical absorption and electrical resistivity results.

Original language	English (US)
Article number	025028
Journal	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume	24
Issue number	2
DOIs	https://doi.org/10.1088/0268-1242/24/2/025028
State	Published - 2009

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/24/2/025028

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@article{7c71a919aec04aea94473882c201574c,

title = "Role of oxygen vacancies in the high-temperature thermopower of indium oxide and indium tin oxide films",

abstract = "Thermopower measurements in a range of 300-650 K along with room temperature optical absorption and electrical resistivity studies were performed on indium oxide (IO) and indium tin oxide (ITO) thin films grown by reactive dc sputtering. The thermopower of as-grown and oxygen-annealed IO and ITO films measured in Ar ambient displayed characteristics attributable to oxygen loss. The observations were substantiated with optical absorption and electrical resistivity results.",

author = "{Sarath Kumar}, {S. R.} and S. Kasiviswanathan",

year = "2009",

doi = "10.1088/0268-1242/24/2/025028",

language = "English (US)",

volume = "24",

journal = "SEMICONDUCTOR SCIENCE AND TECHNOLOGY",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "2",

}

TY - JOUR

T1 - Role of oxygen vacancies in the high-temperature thermopower of indium oxide and indium tin oxide films

AU - Sarath Kumar, S. R.

AU - Kasiviswanathan, S.

PY - 2009

Y1 - 2009

N2 - Thermopower measurements in a range of 300-650 K along with room temperature optical absorption and electrical resistivity studies were performed on indium oxide (IO) and indium tin oxide (ITO) thin films grown by reactive dc sputtering. The thermopower of as-grown and oxygen-annealed IO and ITO films measured in Ar ambient displayed characteristics attributable to oxygen loss. The observations were substantiated with optical absorption and electrical resistivity results.

AB - Thermopower measurements in a range of 300-650 K along with room temperature optical absorption and electrical resistivity studies were performed on indium oxide (IO) and indium tin oxide (ITO) thin films grown by reactive dc sputtering. The thermopower of as-grown and oxygen-annealed IO and ITO films measured in Ar ambient displayed characteristics attributable to oxygen loss. The observations were substantiated with optical absorption and electrical resistivity results.

UR - http://www.scopus.com/inward/record.url?scp=65549103893&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/24/2/025028

DO - 10.1088/0268-1242/24/2/025028

M3 - Article

AN - SCOPUS:65549103893

SN - 0268-1242

VL - 24

JO - SEMICONDUCTOR SCIENCE AND TECHNOLOGY

JF - SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IS - 2

M1 - 025028

ER -

Role of oxygen vacancies in the high-temperature thermopower of indium oxide and indium tin oxide films

Abstract

ASJC Scopus subject areas

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