Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser

H. S. Djie; B. S. Ooi; X. M. Fang; Y. Wu; J. M. Fastenau; W. K. Liu; M. Hopkinson

doi:10.1364/OL.32.000044

Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser

H. S. Djie, B. S. Ooi, X. M. Fang, Y. Wu, J. M. Fastenau, W. K. Liu, M. Hopkinson

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

We report the first demonstration to our knowledge of an ultrabroad emission laser using InGaAs/GaAs quantum dots by cycled monolayer deposition. The device exhibits a lasing wavelength coverage of ~40 nm at an ~1160 nm center wavelength at room temperature. The broadband signature results from the superposition of quantized lasing states from highly inhomogeneous dots.

Original language	English (US)
Pages (from-to)	44-46
Number of pages	3
Journal	OPTICS LETTERS
Volume	32
Issue number	1
DOIs	https://doi.org/10.1364/OL.32.000044
State	Published - Jan 1 2007
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OL.32.000044

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title = "Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser",

abstract = "We report the first demonstration to our knowledge of an ultrabroad emission laser using InGaAs/GaAs quantum dots by cycled monolayer deposition. The device exhibits a lasing wavelength coverage of ~40 nm at an ~1160 nm center wavelength at room temperature. The broadband signature results from the superposition of quantized lasing states from highly inhomogeneous dots.",

author = "Djie, {H. S.} and Ooi, {B. S.} and Fang, {X. M.} and Y. Wu and Fastenau, {J. M.} and Liu, {W. K.} and M. Hopkinson",

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AU - Djie, H. S.

AU - Ooi, B. S.

AU - Fang, X. M.

AU - Wu, Y.

AU - Fastenau, J. M.

AU - Liu, W. K.

AU - Hopkinson, M.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - We report the first demonstration to our knowledge of an ultrabroad emission laser using InGaAs/GaAs quantum dots by cycled monolayer deposition. The device exhibits a lasing wavelength coverage of ~40 nm at an ~1160 nm center wavelength at room temperature. The broadband signature results from the superposition of quantized lasing states from highly inhomogeneous dots.

AB - We report the first demonstration to our knowledge of an ultrabroad emission laser using InGaAs/GaAs quantum dots by cycled monolayer deposition. The device exhibits a lasing wavelength coverage of ~40 nm at an ~1160 nm center wavelength at room temperature. The broadband signature results from the superposition of quantized lasing states from highly inhomogeneous dots.

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AN - SCOPUS:33846999323

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EP - 46

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Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser

Abstract

ASJC Scopus subject areas

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