Room temperature CW 1.3 μm single mode lasing of InAs quantum dot micro-disk lasers grown on (001) Si

Yating Wan; Qiang Li; Alan Y. Liu; Arthur C. Gossard; John E. Bowers; Evelyn L. Hu; Kei May Lau

doi:10.1364/cleo_si.2016.sm1g.3

Room temperature CW 1.3 μm single mode lasing of InAs quantum dot micro-disk lasers grown on (001) Si

Yating Wan, Qiang Li, Alan Y. Liu, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, Kei May Lau

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Heteroepitaxially grown InAs quantum dot micro-disk lasers were demonstrated on planar Si (001) substrates. Room-temperature continuous-wave lasing 1.3 μm with a threshold pump power of 250 μW was achieved for a 4 μm disk.

Original language	English (US)
Title of host publication	2016 Conference on Lasers and Electro-Optics, CLEO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781943580118
DOIs	https://doi.org/10.1364/cleo_si.2016.sm1g.3
State	Published - Dec 16 2016
Externally published	Yes

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title = "Room temperature CW 1.3 μm single mode lasing of InAs quantum dot micro-disk lasers grown on (001) Si",

abstract = "Heteroepitaxially grown InAs quantum dot micro-disk lasers were demonstrated on planar Si (001) substrates. Room-temperature continuous-wave lasing 1.3 μm with a threshold pump power of 250 μW was achieved for a 4 μm disk.",

author = "Yating Wan and Qiang Li and Liu, {Alan Y.} and Gossard, {Arthur C.} and Bowers, {John E.} and Hu, {Evelyn L.} and Lau, {Kei May}",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-18",

year = "2016",

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doi = "10.1364/cleo_si.2016.sm1g.3",

language = "English (US)",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - GEN

T1 - Room temperature CW 1.3 μm single mode lasing of InAs quantum dot micro-disk lasers grown on (001) Si

AU - Wan, Yating

AU - Li, Qiang

AU - Liu, Alan Y.

AU - Gossard, Arthur C.

AU - Bowers, John E.

AU - Hu, Evelyn L.

AU - Lau, Kei May

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2016/12/16

Y1 - 2016/12/16

N2 - Heteroepitaxially grown InAs quantum dot micro-disk lasers were demonstrated on planar Si (001) substrates. Room-temperature continuous-wave lasing 1.3 μm with a threshold pump power of 250 μW was achieved for a 4 μm disk.

AB - Heteroepitaxially grown InAs quantum dot micro-disk lasers were demonstrated on planar Si (001) substrates. Room-temperature continuous-wave lasing 1.3 μm with a threshold pump power of 250 μW was achieved for a 4 μm disk.

UR - https://opg.optica.org/abstract.cfm?URI=CLEO_SI-2016-SM1G.3

UR - http://www.scopus.com/inward/record.url?scp=85010660414&partnerID=8YFLogxK

U2 - 10.1364/cleo_si.2016.sm1g.3

DO - 10.1364/cleo_si.2016.sm1g.3

M3 - Conference contribution

SN - 9781943580118

BT - 2016 Conference on Lasers and Electro-Optics, CLEO 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Room temperature CW 1.3 μm single mode lasing of InAs quantum dot micro-disk lasers grown on (001) Si

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