Room-temperature fabrication of ultrathin oxide gate dielectrics for low-voltage operation of organic field-effect transistors

Young Min Park; Jürgen Daniel; Martin Heeney; Alberto Salleo

doi:10.1002/adma.201003641

Room-temperature fabrication of ultrathin oxide gate dielectrics for low-voltage operation of organic field-effect transistors

Young Min Park, Jürgen Daniel, Martin Heeney, Alberto Salleo

Research output: Contribution to journal › Article › peer-review

143 Scopus citations

Abstract

A high-Î- zirconium oxide gate dielectric is fabricated using a solution-based process at room temperature. UV irradiation decomposes and oxidizes a zirconium-based gel film, which densifies into an ultrathin (

Original language	English (US)
Pages (from-to)	971-974
Number of pages	4
Journal	Advanced Materials
Volume	23
Issue number	8
DOIs	https://doi.org/10.1002/adma.201003641
State	Published - Feb 22 2011
Externally published	Yes

ASJC Scopus subject areas

Mechanics of Materials
General Materials Science
Mechanical Engineering

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10.1002/adma.201003641

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@article{3029540209834c2f8743db136bb28703,

title = "Room-temperature fabrication of ultrathin oxide gate dielectrics for low-voltage operation of organic field-effect transistors",

abstract = "A high-{\^I}- zirconium oxide gate dielectric is fabricated using a solution-based process at room temperature. UV irradiation decomposes and oxidizes a zirconium-based gel film, which densifies into an ultrathin (",

author = "Park, {Young Min} and J{\"u}rgen Daniel and Martin Heeney and Alberto Salleo",

note = "Generated from Scopus record by KAUST IRTS on 2023-02-14",

year = "2011",

month = feb,

day = "22",

doi = "10.1002/adma.201003641",

language = "English (US)",

volume = "23",

pages = "971--974",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "WILEY-V C H VERLAG GMBH",

number = "8",

}

TY - JOUR

T1 - Room-temperature fabrication of ultrathin oxide gate dielectrics for low-voltage operation of organic field-effect transistors

AU - Park, Young Min

AU - Daniel, Jürgen

AU - Heeney, Martin

AU - Salleo, Alberto

N1 - Generated from Scopus record by KAUST IRTS on 2023-02-14

PY - 2011/2/22

Y1 - 2011/2/22

N2 - A high-Î- zirconium oxide gate dielectric is fabricated using a solution-based process at room temperature. UV irradiation decomposes and oxidizes a zirconium-based gel film, which densifies into an ultrathin (

AB - A high-Î- zirconium oxide gate dielectric is fabricated using a solution-based process at room temperature. UV irradiation decomposes and oxidizes a zirconium-based gel film, which densifies into an ultrathin (

UR - https://onlinelibrary.wiley.com/doi/10.1002/adma.201003641

UR - http://www.scopus.com/inward/record.url?scp=79951824880&partnerID=8YFLogxK

U2 - 10.1002/adma.201003641

DO - 10.1002/adma.201003641

M3 - Article

SN - 0935-9648

VL - 23

SP - 971

EP - 974

JO - Advanced Materials

JF - Advanced Materials

IS - 8

ER -

Room-temperature fabrication of ultrathin oxide gate dielectrics for low-voltage operation of organic field-effect transistors

Abstract

ASJC Scopus subject areas

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