Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons

Aigu L. Lin; Haiyang Peng; Zhiqi Liu; Tom Wu; Chenliang Su; Kian Ping Loh; A. Ariando; Wei Chen; Andrew T.S. Wee

doi:10.1002/smll.201302986

Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons

Aigu L. Lin, Haiyang Peng, Zhiqi Liu, Tom Wu, Chenliang Su, Kian Ping Loh, A. Ariando, Wei Chen, Andrew T.S. Wee^*

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resistance state can be restored by releasing the trapped charges by reversing the direction of current flow together with the magnetic field orientation.

Original language	English (US)
Pages (from-to)	1945-1952
Number of pages	8
Journal	Small
Volume	10
Issue number	10
DOIs	https://doi.org/10.1002/smll.201302986
State	Published - May 28 2014

Keywords

MRAM
highly disordered system
magnetic graphene oxides
organic spintronics
variable range hopping

ASJC Scopus subject areas

General Chemistry
Biotechnology
General Materials Science
Biomaterials

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10.1002/smll.201302986

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abstract = "A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resistance state can be restored by releasing the trapped charges by reversing the direction of current flow together with the magnetic field orientation.",

keywords = "MRAM, highly disordered system, magnetic graphene oxides, organic spintronics, variable range hopping",

author = "Lin, {Aigu L.} and Haiyang Peng and Zhiqi Liu and Tom Wu and Chenliang Su and Loh, {Kian Ping} and A. Ariando and Wei Chen and Wee, {Andrew T.S.}",

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AU - Lin, Aigu L.

AU - Peng, Haiyang

AU - Liu, Zhiqi

AU - Wu, Tom

AU - Su, Chenliang

AU - Loh, Kian Ping

AU - Ariando, A.

AU - Chen, Wei

AU - Wee, Andrew T.S.

PY - 2014/5/28

Y1 - 2014/5/28

N2 - A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resistance state can be restored by releasing the trapped charges by reversing the direction of current flow together with the magnetic field orientation.

AB - A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resistance state can be restored by releasing the trapped charges by reversing the direction of current flow together with the magnetic field orientation.

KW - MRAM

KW - highly disordered system

KW - magnetic graphene oxides

KW - organic spintronics

KW - variable range hopping

UR - http://www.scopus.com/inward/record.url?scp=84901288726&partnerID=8YFLogxK

U2 - 10.1002/smll.201302986

DO - 10.1002/smll.201302986

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SN - 1613-6810

VL - 10

SP - 1945

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JO - Small

JF - Small

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ER -

Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons

Abstract

Keywords

ASJC Scopus subject areas

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