TY - JOUR
T1 - Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser
AU - Das, Ayan
AU - Heo, Junseok
AU - Jankowski, Marc
AU - Guo, Wei
AU - Zhang, Lei
AU - Deng, Hui
AU - Bhattacharya, Pallab
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): N012509-00
Acknowledgements: The work was supported by KAUST under Grant No. N012509-00. L. Z. acknowledges support by the NSF.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
PY - 2011/8/4
Y1 - 2011/8/4
N2 - We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing. © 2011 American Physical Society.
AB - We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing. © 2011 American Physical Society.
UR - http://hdl.handle.net/10754/599538
UR - https://link.aps.org/doi/10.1103/PhysRevLett.107.066405
UR - http://www.scopus.com/inward/record.url?scp=79961175942&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.107.066405
DO - 10.1103/PhysRevLett.107.066405
M3 - Article
C2 - 21902349
SN - 0031-9007
VL - 107
JO - Physical Review Letters
JF - Physical Review Letters
IS - 6
ER -